Preliminary Studies of the Use of an Automated Flow‐Cell Electrodeposition System for the Formation of CdTe Thin Films by Electrochemical Atomic Layer Epitaxy

Huang, Bin; Colletti, Lisa P.; Gregory, Brian W.; Anderson, James L.; Stickney, John L.

doi:10.1149/1.2048677

Cited by 72 publications

(45 citation statements)

References 3 publications

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“…This technique also allows for the decomposition of the deposition process into a series of individual steps with each step being independently optimized. Huang and co-workers [67] showed that thick films of CdTe (beyond 10 monolayers) can be deposited with this technique; however, they stated that film morphology suffers above 100 cycles. This technology relies on a thorough understanding of the fundamental mechanisms for the deposition of the constituent elements in atomic monolayers, and this was investigated by this group [68][69][70] and useful experimental data are provided in these references.…”

Section: Cadmium Telluride (Cdte)mentioning

confidence: 99%

Electrodeposition of Semiconductors

Schlesinger

Rajeshwar

2010

Modern Electroplating

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Section: Cadmium Telluride (Cdte)mentioning

confidence: 99%

Electrodeposition of Semiconductors

Schlesinger

Rajeshwar

2010

Modern Electroplating

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“…In Table 1 we report the different thin films considered in this study. All syntheses were carried out by means of an automated deposition system, consisting of a distribution system composed of Pyrex bottles, electrochemical cells, a potentiostat, a control system for the solenoid valves and the stability of the potential [18,19]. This automated system allows a combination of the solutions within the electrochemical cell ensuring good fluid dynamics and a low contamination due to exposure to air.…”

Section: Methodsmentioning

confidence: 99%

Operando SXRD of E-ALD deposited sulphides ultra-thin films: Crystallite strain and size

Giaccherini

Russo

Carlà

et al. 2018

Applied Surface Science

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a b s t r a c tElectrochemical Atomic Layer Deposition (E-ALD), exploiting surface limited electrodeposition of atomic layers, can easily grow highly ordered ultra-thin films and 2D structures. Among other compounds Cu x Zn y S grown by means of E-ALD on Ag(111) has been found particularly suitable for the solar energy conversion due to its band gap (1.61 eV). However its growth seems to be characterized by a micrometric thread-like structure, probably overgrowing a smooth ultra-thin films. On this ground, a SXRD investigation has been performed, to address the open questions about the structure and the growth of Cu x Zn y S by means of E-ALD. The experiment shows a pseudo single crystal pattern as well as a powder pattern, confirming that part of the sample grows epitaxially on the Ag(111) substrate. The growth of the film was monitored by following the evolution of the Bragg peaks and Debye rings during the E-ALD steps. Breadth and profile analysis of the Bragg peaks lead to a qualitative interpretation of the growth mechanism. This study confirms that Zn lead to the growth of a strained Cu 2 S-like structure, while the growth of the thread-like structure is probably driven by the release of the stress from the epitaxial phase.

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“…If the sequence in Figure 3.2 is repeated an arbitrary number of times, a multilayer structure consisting of homo-or heteroepitaxial monoatomic layers is obtained [21]. Film growth using this protocol can be automated with an experimental apparatus for electrochemical atomic layer epitaxy (ECALE) developed by Stickney et al [51]. An additional variation of the SLRR protocol for thin film growth applications was reported recently [17].…”

Section: General Descriptionmentioning

confidence: 99%

Electrochemical Surface Processes and Opportunities for Material Synthesis

Brankovic¹,

Zangari²

2015

Advances in Electrochemical Sciences and Engineering

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Technological advances in the operation and performance of microelectronic, optical, magnetic, and, more recently, energy conversion devices depend in large part on an ever-increasing accuracy of material synthesis and film fabrication methods. In particular, the ongoing miniaturization of devices requires strict control of the crystal structure and microstructure in film as well as patterned structures, often down to the atomic scale.Electrodeposition has an important role to play in this pursuit toward miniaturization and enhanced performance [1]. Underpotential deposition (UPD) [2, 3] and surface-limited redox replacement (SLRR) [4] exploit the low energy of the metal ion precursors in solution (of the order of the thermal energy, 0.025-0.03 eV) to control the formation or replacement of single atomic layers via self-limiting processes. In UPD, a monoatomic layer of metal M is deposited on a conductive substrate S at a potential more positive than the redox potential of M [2]. This shift in redox potential is made possible by the fact that the M-S bond is stronger than the M-M bond; since the effective pair interaction V eff = V MM + V SS − 2V MS is typically in the order of 0.01-0.1 eV, only low energy precursors are sensitive to these energy differences, thus limiting the deposit to one (or sometimes two) atomic layers. SLRR involves UPD monolayer formation, followed by displacement of this layer with a full or partial monolayer of a more noble element, through a cementation process [4]. An analogous process, selective electrodesorption-based atomic layer deposition (SEBALD) consists in the formation at UPD of a sacrificial sulfur monolayer to induce UPD of late transition metals such as Fe, Co, and Ni in the form of monolayers or nanosized islands [5].Underpotential codeposition (UPCD) is a generalization of the UPD process, whereby alloy electrodeposition occurs at potentials more positive than the redox potential of the less noble element [6]. UPCD is made possible by the effective atomic pair interactions in the solid state, or equivalently by the alloying bond enthalpy. In contrast with UPD, UPCD is used to form alloy films of arbitrary

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Preliminary Studies of the Use of an Automated Flow‐Cell Electrodeposition System for the Formation of CdTe Thin Films by Electrochemical Atomic Layer Epitaxy

Cited by 72 publications

References 3 publications

Electrodeposition of Semiconductors

Electrodeposition of Semiconductors

Operando SXRD of E-ALD deposited sulphides ultra-thin films: Crystallite strain and size

Electrochemical Surface Processes and Opportunities for Material Synthesis

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