Precise extraction of emitter resistance from an improved floating collector measurement

Morizuka, K.; Hidaka, O.; Mochizuki, H.

doi:10.1109/16.370070

Cited by 9 publications

(2 citation statements)

References 6 publications

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“…The standard open-collector method is a common and widely studied measurement method for direct extraction of the emitter series resistance [17,18]. In this method, with the collector left floating, the externally applied base current, I B , flows across the base-emitter junction into the emitter terminal, and I E = I B .…”

Section: The Improved Open-collector Methodsmentioning

confidence: 99%

Investigation of the mechanism of transport across the poly/monocrystalline silicon interface in polysilicon-emitter bipolar transistors based on variations in the interface treatment process

Jamasb¹

2019

Turk J Elec Eng & Comp Sci

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Electrical transport across the poly/monocrystalline silicon (poly-Si/c-Si) interface has been investigated by introducing variations in the interface treatment process affecting the thickness of the native oxide layer formed on the silicon surface. The I-V relationship characterizing the resistance associated with this interface is extracted using an improved open-collector method, which eliminates the inherent nonlinearity arising from the reverse active characteristics of the bipolar transistor. The nonohmic behavior of the interface at low electric fields is demonstrated to be consistent with direct tunneling through a rectangular barrier presented by an ultrathin interfacial oxide layer. An approximate tunnel junction model is proposed that fits the tunneling current in the low bias regime, predicting the experimentally observed increase in the low-voltage leakage current associated with ultrathin oxides. The thickness of the interfacial oxide extracted by fitting the measured data to the proposed rectangular-barrier tunnel junction model is in good agreement with reported experimental values. Finally, a relation between experimentally introduced variations in the interface treatment process and the magnitude of the resistance associated with the interface is identified, which can be quantitatively explained based on the direct tunnel junction model in terms of differences in the native oxide thickness.

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Section: The Improved Open-collector Methodsmentioning

confidence: 99%

Investigation of the mechanism of transport across the poly/monocrystalline silicon interface in polysilicon-emitter bipolar transistors based on variations in the interface treatment process

Jamasb¹

2019

Turk J Elec Eng & Comp Sci

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“…l(a) (W and L are the device width and length, respectively, and rgi is the base sheet resistance [3]). Therefore, in strong forward bias, a realistic model for a bipolar transistor should have the base-emitter diffusion capacitance connected directly between the base and emitter terminals, outside the base spreading resistance (for the same reason, the base-collector diffusion capacitance should be connected outside the base spreading resistance, in strong reverse bias).…”

Section: Development Of Improved Modelmentioning

confidence: 99%

Capacitance topology for high frequency modeling of bipolar transistors

Ciubotaru

Carter²

1997 IEEE MTT-S International Microwave Symposium Digest

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The standard SPICE Gummel-Poon model for bipolar transistors in the case of current crowding is inaccurate at high frequencies primarily due to the position of the capacitances. An improved distributed bipolar transistor model is developed, with fractions of both the depletion and the diffusion capacitances placed outside the base spreading resistance and the transistor junctions. The model is contrasted with the standard model by comparing the high frequency characteristics for an HBT.

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The HiCuM Bipolar Transistor Model

Schröter

Ardouin²

2010

Compact Modeling

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Precise extraction of emitter resistance from an improved floating collector measurement

Cited by 9 publications

References 6 publications

Investigation of the mechanism of transport across the poly/monocrystalline silicon interface in polysilicon-emitter bipolar transistors based on variations in the interface treatment process

Investigation of the mechanism of transport across the poly/monocrystalline silicon interface in polysilicon-emitter bipolar transistors based on variations in the interface treatment process

Capacitance topology for high frequency modeling of bipolar transistors

The HiCuM Bipolar Transistor Model

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