Potential of InGaAs/GaAs Quantum Dots for Applications in Vertical Cavity Semiconductor Optical Amplifiers

The Composition Effect on the Dynamics of Electrons in Sb-Based QD-SOAs

“…The average signal photon density S av is given by [14] max   gPn si ng S av wLD L g c pw (9) P in is the input signal power to the SOA, n g is the group refractive index, ћ is the normalized Plank's constant, w p is the peak frequency, D is the strip width, L is the cavity length, c is the free space light speed, g max is the peak material gain taken at the peak frequency. The input signal wavelength is assumed to be injected to the QD SOA at a peak wavelength of GS for each structure.…”

“…This is to intend these structures to the ease of QD growing. QD energy levels are calculated using parabolic band quantumdisc model [20] where the dots are assumed to be in the form of a disc with radius (14 ) nm and height (2) hn m  , unless states otherwise. Quantum well WL thickness is taken as (9 nm).…”

CdSe/ZnSe Quantum-Dot Semiconductor Optical Amplifiers

“…According to Pauli's exclusion principle, the occupation probability in the QD GS is given as f = N/2(N Q /w x ) [8] where N is the QD carrier density. The average signal photon density S av is given by [9], (10) Note that; P in is the input signal power, n g is the group refractive index, ћ is the normalized Plank's constant, w p is the peak frequency, D is the width of the active layer, L is the cavity length, g p is the peak material gain, c is the free space light speed. The Fibry-Perot amplifier gain FP G is given by [9],…”

“…Φ is the phase angle while G S is the single-pass gain of the SOA structure, given by [9] (12) where α int is the loss coefficient.…”

ZnSe / ZnS Quantum-Dot Semiconductor Optical Amplifiers

“…According to Pauli's exclusion principle, the occupation probability in the quantum-dot ground state relates to the carrier density N in the QD by f = N/2(N Q /w x ) [5] where w x is the size of the QD. The average signal photon density S av is given by [6]  …”