Potassium adsorption and coadsorption with oxygen on a Si(111) surface

Boishin, G.; Surnev, L.

doi:10.1016/0039-6028(92)90068-h

Cited by 17 publications

(2 citation statements)

References 44 publications

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“…We therefore assume that a similar process occurs during the KCl adsorption on the Si(111)7 × 7 substrate. Desorption of Cl in form of SiCl 2 and SiCl 4 species from Si(111)7 × 7, inducing etching of the substrate, is reported at slightly higher temperatures (starting at ~330 K) than RT 31 and with respect to K, significant desorption via first and second order processes, occurs at temperatures higher than those used in our experiments (up to 430 K) 32 33 . Thus, we suggest that adsorption of KCl on the Si(111)7 × 7 surface leads to an excess of K on the surface via a dissociation of KCl, allowing the formation of 3 ML (111) K-Cl-K areas.…”

Section: Discussionmentioning

confidence: 53%

KCl ultra-thin films with polar and non-polar surfaces grown on Si(111)7 × 7

Beinik

Barth

Hanbücken

et al. 2015

Sci Rep

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The growth of ultra-thin KCl films on the Si(111)7 × 7 reconstructed surface has been investigated as a function of KCl coverage and substrate temperature. The structure and morphology of the films were characterized by means of scanning tunneling microscopy (STM) under ultra-high vacuum (UHV) conditions. Detailed analysis of the atomically resolved STM images of islands grown at room and high temperatures (400 K–430 K) revealed the presence of KCl(001) and KCl(111) islands with the ratio between both structures depending on the growth temperature. At room temperature, the growth of the first layer, which covers the initial Si(111)7 × 7 surface, contains double/triple atomic layers of KCl(001) with a small fraction of KCl(111) islands. The high temperature growth promotes the appearance of large KCl(111) areas, which are built up by three atomic layers. At room and high temperatures, flat and atomically well-defined ultra-thin KCl films can be grown on the Si(111)7 × 7 substrate. The formation of the above mentioned (111) polar films is interpreted as a result of the thermally activated dissociative adsorption of KCl molecules on Si(111)7 × 7, which produces an excess of potassium on the Si surface.

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Section: Discussionmentioning

confidence: 53%

KCl ultra-thin films with polar and non-polar surfaces grown on Si(111)7 × 7

Beinik

Barth

Hanbücken

et al. 2015

Sci Rep

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“…A sample of size 208mm 2 is cut from p-type boron doped Si (5512) wafer having a resistivity of 10-15 ohm-cm. The sample was cleaned by modified Shiraki process [14] after that it is mounted in to a precision manipulator with the Ta sample holder. The sample is degassed at 600º C by direct resistive heating for 12 hour followed by repeated flashing to 1150º C for 5 second and cooling to RT at a very slow rate of 2º C/s.…”

Section: Methodsmentioning

confidence: 99%

Formation of Potassium Nanostructures on Reconstructed High Index Si (5512)2x1 Surface for Night Vision Devices (NVD)

Sharma¹,

Dhiman²,

Kumar³

et al. 2014

IOSRJAP

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4.2 Electron work function of metals and semiconductors

Jakobi¹

2002

Landolt-Börnstein - Group III Condensed Matter

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If an electron beam is directed towards a surface, it gets reflected if its potential is equal to -(E P /e + ∆Φ), the negative value of the primary energy divided by e and corrected for ∆Φ between the surface and the electron emitter (in the widest sense: cathode, electron gun, etc.). Since the surface serves here as the anode in a diode configuration, the name diode method has been chosen. This method was introduced early by P.A. Anderson [35A]. Many details of different experimental set-ups are discussed in [73K2, 79H3]. It was pointed out [85K8] that for carefully chosen conditions and for a patchy surface, i.e., a surface consisting of a composite of smaller areas of different work function, the diode method measures the same arithmetical average of Φ as the Kelvin method (see below). How to use a HREEL spectrometer for the diode method is reported in Ref.[85S3]. Vibrating capacitor method (Kelvin)The vibrating capacitor method is based on the work of Lord Kelvin [1898K] and of Zisman [32Z]. A condensor is formed of the surface to be studied and a reference electrode in front of it which are connected by a ammeter and a variable voltage source. If the capacitance between the plates (sample and reference electrode) is changed, e.g., by changing their distance, a current will flow. By compensating the Ref. p. 4.2-118] 4.2 Electron work function of metals and semiconductors Lando lt-Börnstein New Series III/42A2 4.2-7contact potential difference through the voltage source, the current can be brought to zero. Since Φ of the surface is part of the contact potential, its changes relative to the reference electrode can be measured. A more extended description can be found in Ref. [79H3]. A very versatile instrument of this kind was developed by Besocke [76B]. Data collectionData have been collected for metal as well as semiconductor substrates. In the case of metals only elemental, single-crystalline samples were considered. There are a few exceptions to this general rule. Some metallic alloys are listed in case of single-crystalline samples of well defined (stoichiometric) composition. Some data are also incorporated for evaporated, mostly polycrystalline films of materials for which no single-crystal data are available. For semiconductor substrates, adsorbate-induced workfunction changes consist of two contributions: band-bending and electron-affinity changes. Systems were discarded for which the overall change in work function was small (<0.2 eV) or for which the authors did not report a separation of the two contributions. With respect to the adsorbates, only single-component adsorption layers were considered, i.e., co-adsorbates were omitted. Furthermore, it should be noted that completeness -although intended -could not be achieved. It was learned that work-function data are very often not in the center of a publication. Work-function data even seemed to many authors too marginal to give explicitly reference to them in the title, abstract or key words. Therefore, also computer based research could not guarant...

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Potassium adsorption and coadsorption with oxygen on a Si(111) surface

Cited by 17 publications

References 44 publications

KCl ultra-thin films with polar and non-polar surfaces grown on Si(111)7 × 7

KCl ultra-thin films with polar and non-polar surfaces grown on Si(111)7 × 7

Formation of Potassium Nanostructures on Reconstructed High Index Si (5512)2x1 Surface for Night Vision Devices (NVD)

4.2 Electron work function of metals and semiconductors

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