Pulsed plasma doping (P'LAD) provides controllable and cost effective solutions to dopant delively in semiconductor device fabrication [1,2]. In the P'LAD system under investigation here, plasma is ignited with each negative voltage pulse applied to the cathode electrodes, including the silicon wafer. During the pulse-on period, positive ions are accelerated across the sheath and implanted within the wafer. This process has been studied using Hiden EQP mass spectrometer installed within the pulsed electrode f…
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