MRS Proc. 2000 DOI: 10.1557/proc-610-b3.9 View full text
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D. Lenoble, A. Halimaoui, A. Grouillet

Abstract: AbstractIn this paper, we report for the first time the effect of sacrificial oxide (sacox) on the boron diffusion in ultra-shallow P+/N junctions. It is shown that the boron diffusivity is enhanced when low energy implantations are performed through sacrificial oxide. The various experimental data lead to conclude that the Post-Oxidation Enhanced Diffusion (POED) is due to a « mirror effect » seen by the Si interstitials incoming into the sacox layer. POED occurs even for sacox as thin as 1.5 nm. From a simpl…

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