2019
DOI: 10.1016/j.jpowsour.2019.226956
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Polyethylenimine ethoxylated interlayer-mediated ZnO interfacial engineering for high-performance and low-temperature processed flexible perovskite solar cells: A simple and viable route for one-step processed CH3NH3PbI3

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Cited by 28 publications
(14 citation statements)
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“…The main issues of the performance of flexible devices are the low FF due to the high series resistance (R s ), and the worse J sc affected by the surface properties the flexible substrate [ 63 ]. R s of the controlled and GABr-treated devices deposited on different substrates is summarized in Figure 9 f. This result indicates that GABr post-treatment can effectively reduce the R s of the devices, which can be attributed to the modified surface morphology of perovskite layer [ 33 ]. The obstacles in the development of flexible PSCs based on PEN-ITO or PET-ITO are the worse efficiency, brittleness of ITO and the relatively high cost.…”
Section: Resultsmentioning
confidence: 99%
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“…The main issues of the performance of flexible devices are the low FF due to the high series resistance (R s ), and the worse J sc affected by the surface properties the flexible substrate [ 63 ]. R s of the controlled and GABr-treated devices deposited on different substrates is summarized in Figure 9 f. This result indicates that GABr post-treatment can effectively reduce the R s of the devices, which can be attributed to the modified surface morphology of perovskite layer [ 33 ]. The obstacles in the development of flexible PSCs based on PEN-ITO or PET-ITO are the worse efficiency, brittleness of ITO and the relatively high cost.…”
Section: Resultsmentioning
confidence: 99%
“…However, the development of flexible PSCs still suffers from poor efficiency which is much lower than rigid PSCs. To the best of our knowledge, the state-of-the-art PCE of rigid MAPbI 3 -based PSCs has reached 21.88% [ 31 ] and several works have been carried out to improve the efficiency of flexible PSCs to over 18% [ 8 , 32 , 33 , 34 ]. Considering that the low-temperature manufacturing of GABr treatment (<150 °C) and the previous applications in improving the device performance, it is expected to utilize this optimization method to improve the efficiency of flexible devices [ 21 , 22 , 35 , 36 ].…”
Section: Introductionmentioning
confidence: 99%
“…In order to elucidate the origin of the improvement in the photovoltaic performance, especially both FF and J sc for PEDOT:PSS/FMoS 2 (5), we further calculated the resistance of the devices. In general, it is well known that lower series resistance (R S ) and higher shunt resistance (R SH ) are required to achieve higher FF in the solar cell device [64]. Based on the J–V curves obtained from the devices, it is clearly revealed that the device with PEDOT:PSS/FMoS 2 (5) as HTL showed the lowest R S while maintaining higher R SH , leading to enhancement in charge extraction.…”
Section: Resultsmentioning
confidence: 99%
“…It is worthy to mention that the thermal instability of lead halide perovskites is one of the key demerits of using ZnO as an ETL for F-PSCs [86]. To avoid the photoactive layer decomposition, Lim et al utilized a polyethyleneimine ethoxylated layer on ZnO to minimize the direct contact between the perovskite (MAPbI 3 ) and ETLs [87]. They obtained the PCE of 15.8% when compared to the control device (12.6%) for conventional planar PSCs and 11.9% for F-PSCs.…”
Section: New Inorganic Etl Materialsmentioning
confidence: 99%