1992
DOI: 10.1016/0038-1098(92)90046-c
|View full text |Cite
|
Sign up to set email alerts
|

Polycrystalline bismuth selenide (Bi2Se3) thin films prepared by reactive evaporation

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

1993
1993
2024
2024

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 11 publications
(1 citation statement)
references
References 10 publications
0
1
0
Order By: Relevance
“…It is based on the fact that continuous condensation of a given vapour at a given rate takes place only if the temperature of the substrate drops below a certain critical value. For many binary systems it has been found that a stoichiometric interval exists with a limited degree of freedom in selecting the individual components and substrate temperature for obtaining a particular compound of the system [17][18][19]. In this work we have used a conventional vacuum system with two separate sources.…”
Section: Methodsmentioning
confidence: 99%
“…It is based on the fact that continuous condensation of a given vapour at a given rate takes place only if the temperature of the substrate drops below a certain critical value. For many binary systems it has been found that a stoichiometric interval exists with a limited degree of freedom in selecting the individual components and substrate temperature for obtaining a particular compound of the system [17][18][19]. In this work we have used a conventional vacuum system with two separate sources.…”
Section: Methodsmentioning
confidence: 99%