2006
DOI: 10.1103/physrevlett.97.247602
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Polarization Switching Dynamics Governed by the Thermodynamic Nucleation Process in Ultrathin Ferroelectric Films

Abstract: A long standing problem of domain switching process -how domains nucleate -is examined in ultrathin ferroelectric films. We demonstrate that the large depolarization fields in ultrathin films could significantly lower the nucleation energy barrier (U *) to a level comparable to thermal energy (kBT ), resulting in power-law like polarization decay behaviors. The "Landauer's paradox": U * is thermally insurmountable is not a critical issue in the polarization switching of ultrathin ferroelectric films. We empiri… Show more

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Cited by 89 publications
(52 citation statements)
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“…Hence, the mean coercive field E c ¼ |V down -V up |/2t of the BTO film with the thickness t ¼ 3 nm ranges from 0.6 to 1 MV cm À 1 . These values are consistent with the coercive fields reported for very thin (tB5 nm) BTO films earlier 17,43,44 . This result is a strong indication of the good quality of the fabricated ultrathin BTO barrier.…”
supporting
confidence: 81%
“…Hence, the mean coercive field E c ¼ |V down -V up |/2t of the BTO film with the thickness t ¼ 3 nm ranges from 0.6 to 1 MV cm À 1 . These values are consistent with the coercive fields reported for very thin (tB5 nm) BTO films earlier 17,43,44 . This result is a strong indication of the good quality of the fabricated ultrathin BTO barrier.…”
supporting
confidence: 81%
“…Josephson junctions [7], spin-polarized ferromagnetic tunneling junctions [8], Schottky junctions [9], field effect devices [10], ferroelectric capacitors [11,12], and multiferroic devices [13]. To design such oxide thin film devices, it is important to understand how thickness (t) affects the transport and magnetic properties of SrRuO 3 , especially in the ultrathin limit.…”
mentioning
confidence: 99%
“…Moreover, coxisting ferroelectric, nonferroelectric, and conducting regions as well as large depolarizing field at the sample-electrode interface give rise to complicated domain switching kinetics and broader relaxation time scale. [3][4][5] Therefore, determination of relaxed and intrinsic ferroelectric polarization in them is extremely difficult. [6][7][8][9] Depending on the resistivity and polarization of the sample, an appropriate technique needs to be developed in order to extract the tiny intrinsic and relaxed hysteretic or switchable polarization by eliminating stronger contributions from nonhysteretic (i.e., nonswitchable) and leakage components.…”
mentioning
confidence: 99%