Polarization-driven high Rabi frequency of piezotronic valley transistors

Liu, Ruhao; Zhang, Yaming; Zhou, Yuankai; Nie, Jiaheng; Li, Lijie; Zhang, Yan

doi:10.1016/j.nanoen.2023.108550

Cited by 3 publications

(2 citation statements)

References 96 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In piezotronic valley transistors made of normal/ferromagnetic/normal structure of monolayer TMDs, Rabi frequency approaching 4200 MHz was reported. [134] The strain-induced strong polarization can be applied to manipulate the valley qubit. In conventional valleytronic materials, it is usually difficult to generate valley polarization only by a gate field.…”

Section: Recent Progress Of Valleytronics Beyond Graphenementioning

confidence: 99%

Valley filtering and valley-polarized collective modes in bulk graphene monolayers

Zheng 郑,

Zhai 翟

2024

Chinese Phys. B

View full text Add to dashboard Cite

The presence of two sublattices in hexagonal graphene brings two energetically degenerate extremes in the conduction and valence band, which are identified by the valley quantum number. Recently, this valley degree of freedom has been suggested to encode and process information, which develops a new carbon-based electronics named graphene valleytronics. In this topical review, we present and discuss valley-related transport properties in bulk graphene monolayers, which are due to strain-induced pseudomagnetic fields and associated vector potential, sublattice-stagger potential, and the valley-Zeeman effect. These valley-related interactions can be utilized to obtain valley filtering, valley spatial separation, valley-resolved guiding modes, and valley-polarized collective modes such as edge or surface plasmons. The present challenges and the perspectives on graphene valleytronics are also provided in this review.

show abstract

Section: Recent Progress Of Valleytronics Beyond Graphenementioning

confidence: 99%

Valley filtering and valley-polarized collective modes in bulk graphene monolayers

Zheng 郑,

Zhai 翟

2024

Chinese Phys. B

View full text Add to dashboard Cite

show abstract

“…Piezotronics and piezophototronics have widespread applications in flexible electronics, low consumption devices and sensor applications [2]. A large numbei of high performance devices based on piezotronic effect such as piezotronic transistors [3], piezotronic Qubit devices [4], piezotronics sensors [5], and piezotronic quantum harmonic oscillator [6] have been studied based on piezoelectric semiconductors materials. Recently, The ML MoS 2 structure based on the normal ferromagnetic normal (NFN) structure has been widely studied [7].…”

Section: Introductionmentioning

confidence: 99%

Polarization characteristics of valley and spin using monolayer MoS2 structure modulated by strain

Liu,

Zhang

2024

International Conference on Mechatronic Engineering and Artificial Intelligence (MEAI 2023)

View full text Add to dashboard Cite

Piezotronics and piezo-phototronics are new emerging fields that have already found applications in nanogenerators, piezoelectric transistors, strain sensors and LEDs. The strain-induced piezoelectric potential plays a crucial role in modulating charge-carrier transport properties in piezoelectric semiconductor materials, especially for two-dimensional (2D) materials. In this work, we theoretically study the piezotronic effect, circularly polarized light and Zeeman field’s impact on the modulation of valley and spin properties in monolayer (ML) MoS2 nanoribbon. We create two ferromagnetic regions in the ML MoS2 nanoribbon to simultaneously manipulate the transport properties of valley and spin using externally applied polarized light and strain. In the proposed junction of ML MoS2, which consists of two barriers modulated by strain, light and Zeeman field, an intriguing coexistence of perfect valley and spin polarization emerges. Our investigation reveals that among these three effects, the huge piezoelectric effect plays a leading role.

show abstract

Polarization-induced giant thermoelectric effect in monolayer MoS2

Liu,

Lü,

et al. 2024

Journal of Applied Physics

View full text Add to dashboard Cite

The authors investigate the influence of local polarization on the thermoelectric properties of monolayer MoS2 using a tight-binding approach. It is found that strain-induced polarization in armchair monolayer MoS2 can be easily embedded to strongly enhance the thermoelectric efficiency ZT for quantum wells. The structure we proposed can achieve a figure of merit ZT of 0.8 at room temperature in an armchair MoS2 nanoribbon, and ZT achieves 1 at 500 K. The results facilitate insight and understanding of strain modulated thermoelectric properties of monolayer MoS2 nanodevices, provide theoretical guidance for experiments, and indicate their great potential in thermoelectric devices.

show abstract

Polarization-driven high Rabi frequency of piezotronic valley transistors

Cited by 3 publications

References 96 publications

Valley filtering and valley-polarized collective modes in bulk graphene monolayers

Valley filtering and valley-polarized collective modes in bulk graphene monolayers

Polarization characteristics of valley and spin using monolayer MoS2 structure modulated by strain

Polarization-induced giant thermoelectric effect in monolayer MoS2

Contact Info

Product

Resources

About