Polarization-Driven Edge-State Transport in Transition-Metal Dichalcogenides

Wang, Ke; Hu, Gongwei; Liu, Ruhao; Zhang, Yaming; Dan, Minjiang; Li, Lijie; Zhang, Yan

doi:10.1103/physrevapplied.13.054074

Cited by 8 publications

(2 citation statements)

References 43 publications

(46 reference statements)

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“…[1,2] It has been well studied in the piezoelectric semiconductor materials, such as the third generation DOI: 10.1002/adfm.202307901 semiconductors like GaN, ZnO, and SiC, [3][4][5][6] and 2D transition metal dichalcogenides (MoS 2 , WSe 2 ). [7][8][9] Benefitting from the direct coupling of mechanical stimuli and semiconductor properties, piezotronics cannot only be used to measure strain/stress with high sensitivity but also improve the performance of electronic devices by the applied force. However, the piezoelectric coefficients of these piezoelectric semiconductors are relatively small.…”

Section: Introductionmentioning

confidence: 99%

A Piezotronic and Magnetic Dual‐Gated Ferroelectric Semiconductor Transistor

Chi,

Zhao,

Zhang

et al. 2023

Adv Funct Materials

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Piezotronics is the coupling effect of the piezoelectric and semiconductor properties; however, the piezoelectric constant of the piezoelectric semiconductor is relatively small while the ferroelectric materials with large piezoelectric constant typically possess weak semiconductor properties, thus limiting the effective coupling coefficient of the piezotronic materials and devices. Here, a piezotronics and magnetic dual‐gated ferroelectric semiconductor transistor (PM‐FEST) is fabricated by Terfenol‐D, aluminum oxide (Al2O3), and ferroelectric semiconductor α‐In2Se3, which has a large piezoelectric coefficient, room‐temperature ferroelectricity, and dipole locking. The charge carrier transport and corresponding drain current of the PM‐FEST can be directly modulated by either the applied magnetic field or external strain. At a low magnetic field (<200 mT), the maximum current on/off ratio of α‐In2Se3 based PM‐FEST is as high as 1700%. Compared with traditional piezotronic devices, the PM‐FEST demonstrates a higher gauge factor (2.3 × 104) than that of the piezoelectric semiconductors. This work provides a possibility of realizing magnetism‐modulated electronics in semiconductors by exploiting the coupling of piezotronics and magnetostriction.

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Section: Introductionmentioning

confidence: 99%

A Piezotronic and Magnetic Dual‐Gated Ferroelectric Semiconductor Transistor

Chi,

Zhao,

Zhang

et al. 2023

Adv Funct Materials

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“…The strain can be induced in the MoS 2 sheet by substrate 21 or during the CVD growth 22 . In recent years, electron, spin and valley-dependent transport properties were reported extensively in monolayer MoS 2 structures, both experimentally and theoretically 23 – 36 . Fontana et al 23 experimentally investigated the transport properties of the electron and hole in a gated MoS 2 Schottky barrier and found that in this structure, the source and drain electrodes’ materials are essential keys in controlling the transport through the conduction or valence band.…”

Section: Introductionmentioning

confidence: 99%

Effect of the strain on spin-valley transport properties in MoS2 superlattice

Sattari

Mirershadi

2021

Sci Rep

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The effect of the strain on the spin and valley dependent transport properties, including the conductance and polarization, through a monolayer MoS2 superlattice under Rashba spin–orbit coupling is theoretically investigated. It is found that the conductance strongly depends on the spin and valley degrees of freedom, and spin-inversion can be achieved by MoS2 superlattice. Also, the spin and valley dependent conductance in a monolayer MoS2 superlattice can be efficiently adjusted via strain and the number of the superlattice barriers. Moreover, it is demonstrated that both the magnitude and sign of the spin and valley polarization depend on the strain strength, the number of barriers, and electrostatic barrier height. Both full spin and valley polarized current (with 100% or − 100% efficiency) can be realized in a MoS2 superlattice under strain.

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Application of transition metal dichalcogenides in mid‐infrared fiber laser

et al. 2020

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Due to the special working wavelength and superb beam quality, the mid‐infrared fiber laser has a wide application prospect in the fields of biomedicine, military defense, laser manufacturing, atmospheric detection, space communication, etc. In recent years, with the emergence of two‐dimensional (2D) saturable absorption materials, the development of mid‐infrared lasers ushered in new opportunities. In particular, as a potential 2D material, transition metal dichalcogenides (TMDs) with various types has attracted extensive attention from researchers because of its unique structural characteristics and ideal photoelectric performance. In this paper, the preparation, main properties and saturable absorption of TMDs are introduced in detail, and latest research progress of mid‐infrared lasers based on saturable absorbers at home and abroad is described.

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Polarization-Driven Edge-State Transport in Transition-Metal Dichalcogenides

Cited by 8 publications

References 43 publications

A Piezotronic and Magnetic Dual‐Gated Ferroelectric Semiconductor Transistor

A Piezotronic and Magnetic Dual‐Gated Ferroelectric Semiconductor Transistor

Effect of the strain on spin-valley transport properties in MoS2 superlattice

Application of transition metal dichalcogenides in mid‐infrared fiber laser

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