Polarity of heavily doped ZnO films grown on sapphire and SiO2 glass substrates by pulsed laser deposition

Adachi, Yutaka; Ohashi, Naoki; Ohgaki, Takeshi; Ohnishi, T.; Sakaguchi, Isao; Ueda, Shigenori; Yoshikawa, Hideki; Kobayashi, Keisuke; Williams, Jesse; Ogino, T.; Haneda, Hajime

doi:10.1016/j.tsf.2011.02.087

Cited by 28 publications

(18 citation statements)

References 35 publications

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“…Roughness decreases with increasing Ga content and are almost independent on the film thickness. This kind of variation in morphology of ZnO‐based TCO films with regard to the variation in the doping content and film thickness was also reported in literature …”

Section: Presentation Of Resultssupporting

confidence: 92%

“…Recently, some authors have found that impurity doping affects the ZnO film polarity even in the case of growth of polycrystalline ZnO films on non‐oriented substrates . Taking into account the significant differences in the growth, chemical, and impurity incorporation properties for (001) and (00‐1) polar surfaces, it is important to understand the effects governing the polarity of ZnO crystallites and to be able to adjust the favorable conditions for the polarity‐selective growth of ZnO films.…”

Section: Introductionmentioning

confidence: 84%

“…Ogino et al showed that the slightly doped GZO films on non‐oriented substrates characterised by abnormal grains having preferably O‐terminated surface, whereas the heavily doped GZO with smooth surface have Zn‐ terminated one . Adachi et alii proved that the polarity of ZnO films on sapphire changes from (00‐1) to (001) due to doping of ZnO by Al . This review of the experimental works allows us to conclude that doping of ZnO by Ga (or Al) increases the probability of formation of ZnO nuclei with (001) polarity and their preferential overgrowth.…”

Section: Revised Nucleation and Growth Model And Applicationsmentioning

confidence: 99%

“…We propose that for the slightly doped ZnO films (impurity doping level is from 0 to around 1 at.% for our sputtering conditions), the number of nuclei with upward (blue nuclei with Zn polarity) and downward (red nuclei with O polarity) pointing c axes seems to be around 50%. When the Ga content increases, the impurity affects the nucleation, e.g., by changing of the surface energy and the surface adsorption/desorption coefficients for Zn‐ and O‐species, leading to nucleation enhancement and predominant presence of nuclei with Zn polarity …”

Section: Revised Nucleation and Growth Model For Doped Zno Filmsmentioning

confidence: 99%

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A Revised Growth Model for Transparent Conducting Ga Doped ZnO Films: Improving Crystallinity by Means of Buffer Layers

Abduev

Akmedov

Асваров

et al. 2015

Plasma Processes & Polymers

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Ga-doped ZnO (GZO) thin films are recently raising both scientific and industrial interests, due to the lack of natural resources. Indium is a crucial raw material, due to ITO modern touchscreen market. By doping ZnO with Ga conductive transparent thin films with various concentrations of dopant are prepared by DC magnetron sputtering from ceramic targets. It is shown how the Ga content plays an important role on the growth kinetics on an initial stage of the film formation and hence on the morphologies, microstructure and electrical properties of as-grown GZO films. A mechanism explaining the role of Ga content on the nucleation process and the structure of growing films is proposed. Based on this mechanism, it is successfully demonstrated that the crystalline quality and hence the conductivity of GZO thin films can be improved by using a GZO buffer layer.

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Section: Presentation Of Resultssupporting

confidence: 92%

Section: Introductionmentioning

confidence: 84%

Section: Revised Nucleation and Growth Model And Applicationsmentioning

confidence: 99%

Section: Revised Nucleation and Growth Model For Doped Zno Filmsmentioning

confidence: 99%

See 2 more Smart Citations

A Revised Growth Model for Transparent Conducting Ga Doped ZnO Films: Improving Crystallinity by Means of Buffer Layers

Abduev

Akmedov

Асваров

et al. 2015

Plasma Processes & Polymers

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“…ZnO films grown on sapphire using pulsed laser deposition (PLD) with a nominally undoped ZnO target exhibited c(-)-polarity, while films deposited with a 1 mol% Al-doped ZnO target exhibited c(+)-polarity. This inversion of polarity occurs not only on sapphire but also on SiO 2 glass substrates [6]. These results indicate that impurity doping affects the polarity of a ZnO film.…”

Section: Introductionmentioning

confidence: 73%

Crystal Polarity and Electrical Properties of Heavily Doped ZnO Films

et al. 2012

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In this study, ZnO f ilms heavily doped with Al or Ga were grown on a polarity-controlled buffer layer using pulsed laser deposition. The films prepared using a 1 mol% Al-doped target with the buffer layer grown at 700 °C had the c(+)-face, whereas the films with the buffer layer grown at 400 °C had the c(-)-face, which means that the polarity control can be successfully carried out using the buffer layer. However, the films prepared using targets doped with more than 1 mol% Al or Ga had the c(+)-face regardless of the polarity of the buffer layer. The 1 mol% Al-doped ZnO film with the c(+)-face had lower electron concentration and higher growth rate than the film with the c(-)-face. This result indicates that the Al content in the film with the c(-)-face was larger than that in the film with the c(+)-face.

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Metal‐Organic Chemical Vapor Deposition Growth of ZnO Nanowires

Sallet¹

2014

Wide Band Gap Semiconductor Nanowires 1

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Metal-organic chemical vapor deposition (MOCVD) (also called metal-organic chemical vapor phase epitaxy (MOVPE) to emphasize the crystallographic relationship) has been, for a long time, one of the most commonly employed techniques in the microelectronics industry for the realization of high-performance electronic and optoelectronic devices [RAZ 89]. Besides the III-V and silicon-based semiconductors, a wide variety of functional materials can be achieved by using MOCVD, including II-VI semiconductors, oxides, magnetic compounds, etc. A large number of elements (from columns I-VII, as well as transitions metals) can be commercially supplied under several organometallic forms with a high purity, thus enlarging the field of potential future applications. That makes MOCVD a technique of choice for developing original materials and/or architectures, from the basic research to the industrial fabrication. The ability to transport chemical species from the bubbler to the reactor, the accurate control of the partial pressures (reactants and dopants), and the high uniformity and reproducibility that are obtained over large areas constitute the main advantages of MOCVD.II-VI semiconductors including selenides, tellurides and sulfides have been widely grown in the past few decades for a large number of applications in IR, visible and UV emitting devices, single photon sources, high energy detectors and solar cells, etc. More recently, the MOCVD growth of oxide compounds in the (Zn, Mg, Cd, Mn)-O system has attracted much research attention, motivated by a unique combination of physical properties in zinc oxide (ZnO)-based materials, which paves the way for original realizations in optoelectronics, sensors, energy harvesting Chapter written by Vincent SALLET.Wide Band Gap Semiconductor Nanowires 1: Low-Dimensionality Effects and Growth, First Edition. Edited by Vincent Consonni and Guy Feuillet.

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Polarity of heavily doped ZnO films grown on sapphire and SiO2 glass substrates by pulsed laser deposition

Cited by 28 publications

References 35 publications

A Revised Growth Model for Transparent Conducting Ga Doped ZnO Films: Improving Crystallinity by Means of Buffer Layers

A Revised Growth Model for Transparent Conducting Ga Doped ZnO Films: Improving Crystallinity by Means of Buffer Layers

Crystal Polarity and Electrical Properties of Heavily Doped ZnO Films

Metal‐Organic Chemical Vapor Deposition Growth of ZnO Nanowires

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