Polarity compensation in ultra-thin films of complex oxides: The case of a perovskite nickelate

Middey, S.; Rivero, Pablo; Meyers, D.; Kareev, M.; Liu, X.; Cao, Yanwei; Freeland, J. W.; Barraza‐Lopez, Salvador; Chakhalian, Jak

doi:10.1038/srep06819

Cited by 60 publications

(57 citation statements)

References 52 publications

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“…As the reconstruction effect often appears only at the substratevacuum interface, the choice of a substrate with the same charge per plane sequence as that of the desired material can be another solution to this problem, which does not require to grow a buffer layer. To investigate this, Middey et al [64] have grown LaNiO 3 films on SrTiO 3 [with polar jump at film/substrate interface: see the upper panel of Fig. 6(a)] and LaAlO 3 [without any polar jump at film/substrate interface: see lower panel of Fig.…”

Section: Generalized Graphene Lattice From Abo 3 Perovskitesmentioning

confidence: 99%

Geometrical lattice engineering of complex oxide heterostructures: a designer approach to emergent quantum states

et al. 2016

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Epitaxial heterostructures composed of complex oxides have fascinated researchers for over a decade as they offer multiple degrees of freedom to unveil emergent many-body phenomena often unattainable in bulk. Recently, apart from stabilizing such artificial structures along the conventional [001]-direction, tuning the growth direction along unconventional crystallographic axes has been highlighted as a promising route to realize novel quantum many-body phases. Here we illustrate this rapidly developing field of geometrical lattice engineering with the emphasis on a few prototypical examples of the recent experimental efforts to design complex oxide heterostructures along the (111) orientation for quantum phase discovery and potential applications.

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Section: Generalized Graphene Lattice From Abo 3 Perovskitesmentioning

confidence: 99%

Geometrical lattice engineering of complex oxide heterostructures: a designer approach to emergent quantum states

et al. 2016

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“…The tendency of developing a larger gap together with higher resistivity may be due to the accumulation of disorder which is expected for polar layer growth on the (111)-oriented substrate. 20 In addition, the insulating layers in the three [2/2] SLs are very thin. With increasing stacking periodicity, electrical conduction through insulating layers may occur which leads to a higher total conductance and smaller calculated band gap.…”

Section: -mentioning

confidence: 99%

“…These polar planes have a significant effect on the growth and may lead to a surface reconstruction. 20 In 2012, Middey et al reported the synthesis of LNO/LAO heterostructures with 2/m monolayers, respectively, on mixed-terminated LAO(111) substrates. 21 Instead of the predicted Dirac-point semimetallic behavior, an activated transport was observed.…”

mentioning

confidence: 99%

Confinement-driven metal-insulator transition and polarity-controlled conductivity of epitaxial LaNiO3/LaAlO3 (111) superlattices

Wei

Grundmann

Lorenz

2016

Applied Physics Letters

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Recently, topological conductivity has been predicted theoretically in LaNiO3(111)-based superlattices. Here we report high-quality epitaxial LaNiO3/LaAlO3 superlattices on (111)-oriented SrTiO3 and LaAlO3 single crystals. For both substrates a metal-insulator transition with decreasing number of LaNiO3 monolayers is found. While the electrical transport is dominated by two-dimensional variable range hopping for superlattices grown on polar mismatched SrTiO3(111), it switches to a thermally activated single gap behavior on polar matched LaAlO3(111). The gap energy of the polar double-layer LaNiO3 superlattices can be tuned via the thickness of the insulating LaAlO3 layers.

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“…Design of a Mott Multiferroic.-The LDA+DMFT calculations reveal that a simultaneous Mott and magnetic state could be engineered in LiOsO 3 by reducing the electronic kinetic energy. One avenue to control and decrease the kinetic energy relies on heterostructuring and interleaving two perovskites together to form a coherent superlattice, whereby an isostructural insulator would restrict the electron hopping due to the reduction in available channels [27][28][29]. Such geometries can be achieved in practice using oxide molecular-beam epitaxy or pulsed-laser deposition methods [30,31].…”

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Design of a Mott Multiferroic from a Nonmagnetic Polar Metal

et al. 2015

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We examine the electronic properties of newly discovered "ferroelectric" metal LiOsO3 combining density-functional and dynamical mean-field theories. We show that the material is close to a Mott transition and that electronic correlations can be tuned to engineer a Mott multiferroic state in 1/1 superlattice of LiOsO3 and LiNbO3. We use electronic structure calculations to predict that the (LiOsO3)1/(LiNbO3)1 superlattice is a type-I multiferroic material with a ferrolectric polarization of 41.2 µC cm −2 , Curie temperature of 927 K, and Néel temperature of 671 K. Our results support a route towards high-temperature multiferroics, i.e., driving non-magnetic polar metals into correlated insulating magnetic states. Introduction.-Multiferroics (MF) are a class of insulating materials where two (or more) primary ferroic order parameters, such as a ferroelectric polarization and long-range magnetic order, coexist. Technologically, they offer the possibility to control magnetic polarizations with an electric field for reduced power consumption [1, 2]. Nonetheless, intrinsic room-temperature MF remain largely elusive. This fact may be understood by examining the microscopic origins for the ferroic order which aids in classifying different phases: In Type-I MF, ferroelectricity and magnetism arise from different chemical species with ordering temperatures largely independent of one another and weak magnetoelectric (ME) coupling [3]. The ferroelectric ordering also typically appears at temperatures higher than the magnetic order, and the spontaneous polarization P is large since it is driven by a second-order Jahn-Teller distortion, e.g., BiFeO 3 [3, 4]. In Type-II MF, however, magnetic order induces ferroelectricity, which indicates a strong ME coupling between the two order parameters. Nonetheless, P is usually much smaller, e.g., by a factor of 10 2 as in R-Mn 2 O 5 (R being rare earth) [5]. In a few MFs with high-transition temperatures, i.e., BiFeO 3 [6] and Sr 1−x Ba x MnO 3 [7-9], magnetism is caused by Mott physics arising from strong correlations. The interactions localize the spins at high temperature, paving the way for magnetic ordering at room temperature. Materials where this robust magnetism is coupled with ferroelectric distortions are ideal candidates for a room-temperature MFs.

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Polarity compensation in ultra-thin films of complex oxides: The case of a perovskite nickelate

Cited by 60 publications

References 52 publications

Geometrical lattice engineering of complex oxide heterostructures: a designer approach to emergent quantum states

Geometrical lattice engineering of complex oxide heterostructures: a designer approach to emergent quantum states

Confinement-driven metal-insulator transition and polarity-controlled conductivity of epitaxial LaNiO3/LaAlO3 (111) superlattices

Design of a Mott Multiferroic from a Nonmagnetic Polar Metal

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