Plastic relaxation and relaxed buffer layers for semiconductor epitaxy

Beanland, Richard; Dunstan, D. J.; Goodhew, P.J.

doi:10.1080/00018739600101477

Cited by 192 publications

(113 citation statements)

References 222 publications

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“…Such mixed misfit dislocations with their lines laying at ͑001͒ film/substrate interface are typical for heteroepitaxy of semiconductors with fcc crystal lattice. 7,9 The orientation of the dislocation line and Burgers vector leads to ϭ␤ϭ60°in Eq. ͑3͒.…”

Section: ͑5͒mentioning

confidence: 99%

“…MD generation at the interface between the film and substrate has been shown to be the most common mechanism for the relaxation of elastic stress. [6][7][8][9] In the majority of cases the MDs are associated with TDs, which are concomitant to MDs but have their lines going through the film to the free surface. 8,10 The Matthews-Blakeslee 11 critical thickness h c for MD generation may be derived 8 by considering the energetics of a combined MD-TD configuration in a stressed film…”

Section: Introductionmentioning

confidence: 99%

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Modeling crosshatch surface morphology in growing mismatched layers. Part II: Periodic boundary conditions and dislocation groups

Andrews

LeSar

Kerner

et al. 2004

Journal of Applied Physics

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We present further developments and understanding of the commonly observed crosshatch surface morphology in strain-relaxed heteroepitaxial films. We have previously proposed that the crosshatch morphology is directly related with strain relaxation via threading dislocation glide which results in both surface step and misfit dislocation ͑MD͒ formation ͓see Andrews et al., J. Appl. Phys. 91, 1933 ͑2002͒-now referred to as Part I͔. In this article, we have used solutions for the stress fields and displacement fields for periodic MD arrays which include the effects of the free surface. These solutions avoid truncation errors associated with finite dislocation arrays that were used in Part I. We have calculated the surface height profile for relaxed films where the misfit dislocations were introduced randomly or the misfit dislocations were placed in groups with alternating sign of the normal component of their Burgers vector. We have calculated the surface height profiles where the slip step remains at the surface ͓''slip step only'' ͑SSO͔͒ and where the slip step is eliminated ͓''slip step eliminated'' ͑SSE͔͒ due to annihilation of opposite sense steps, such as could happen during growth or lateral mass transport. For relaxed films, we find that the surface height undulations, characteristic of crosshatch, increase with increasing film thickness for the SSO case, whereas the surface becomes flatter for the SSE case. Experiments on relaxed In 0.25 Ga 0.75 As films on ͑001͒ GaAs show that the surface height undulations in the ͓110͔ direction increase with increasing film thickness. Thus, we conclude that with increasing film thickness the crosshatch in the slow diffusion ͓110͔ direction is best described by the SSO case.

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Section: ͑5͒mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modeling crosshatch surface morphology in growing mismatched layers. Part II: Periodic boundary conditions and dislocation groups

Andrews

LeSar

Kerner

et al. 2004

Journal of Applied Physics

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“…X-ray diffractometry revealed layer thicknesses and misfit strain. The static strain due to a small difference in the lattice constants of InAs and GaSb, mf 0:62%, was partially relaxed in the thicker InAs layers which led to a small amount of misfit strain in the GaSb layers as well [16].…”

mentioning

confidence: 99%

“…Coherent acoustic phonons were generated by illuminating the heterostructure with ultrashort laser pulses from a Ti:Al 2 O 3 -based laser system ( 800 nm, 150 fs), Since the spot size is large compared to the laser penetration depth, the laser generated strain profile is essentially one dimensional. X rays delivered by the U20 undulator with a divergence of approximately 10 rad, monochromatized to 16.45 keV by a double crystal monochromator [Si (111), E=E 2 10 ÿ4 ] served as the probe. The x-ray focal spot size was about 0:1 mm 2 , i.e., considerably smaller than that of the laser to ensure that over the entire probed area the pump conditions were the same.…”

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confidence: 99%

Picosecond X-Ray Studies of Coherent Folded Acoustic Phonons in a Multiple Quantum Well

et al. 2005

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“…Because these dislocations act as recombination centers for charge carriers [6][7][8] and reduce the device efficiency, the density of dislocations in the active region of the device must be minimized, generally by carefully varying the lattice constant in a thick graded layer. [9][10][11] It may also be possible to mitigate the impact of these dislocations via passivation with impurities, [12][13][14][15] or by controlling the type 16 or direction of the remaining dislocations.…”

Section: Introductionmentioning

confidence: 99%

Period-doubling reconstructions of semiconductor partial dislocations

et al. 2015

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Atomic-scale understanding and control of dislocation cores is of great technological importance, because they act as recombination centers for charge carriers in optoelectronic devices. Using hybrid density-functional calculations, we present period-doubling reconstructions of a 90°partial dislocation in GaAs, for which the periodicity of like-atom dimers along the dislocation line varies from one to two, to four dimers. The electronic properties of a dislocation change drastically with each period doubling. The dimers in the single-period dislocation are able to interact, to form a dispersive one-dimensional band with deep-gap states. However, the inter-dimer interaction for the double-period dislocation becomes significantly reduced; hence, it is free of mid-gap states. The Ga core undergoes a further period-doubling transition to a quadruple-period reconstruction induced by the formation of small hole polarons. The competition between these dislocation phases suggests a new passivation strategy via population manipulation of the detrimental single-period phase.

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Plastic relaxation and relaxed buffer layers for semiconductor epitaxy

Cited by 192 publications

References 222 publications

Modeling crosshatch surface morphology in growing mismatched layers. Part II: Periodic boundary conditions and dislocation groups

Modeling crosshatch surface morphology in growing mismatched layers. Part II: Periodic boundary conditions and dislocation groups

Picosecond X-Ray Studies of Coherent Folded Acoustic Phonons in a Multiple Quantum Well

Period-doubling reconstructions of semiconductor partial dislocations

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