Plasmons and screening in a monolayer of MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>

Scholz, Andreas; Stauber, T.; Schliemann, John

doi:10.1103/physrevb.88.035135

Cited by 124 publications

(138 citation statements)

References 57 publications

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“…In contrast, χ zz (q) has only terms with s = s ′ contributing, thus χ zz (q) is proportional to the Lindhard function χ 0 (q) calculated in Ref. 24. By similar arguments, it can be established that all off-diagonal elements of the spin-susceptibility tensor vanish.…”

Section: B Spin Susceptibility For a Multi-band Systemmentioning

confidence: 71%

Spin susceptibility of two-dimensional transition-metal dichalcogenides

2014

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We have obtained analytical expressions for the q-dependent static spin susceptibility of monolayer transition metal dichalcogenides, considering both the electron-doped and hole-doped cases. Our results are applied to calculate spin-related physical observables of monolayer MoS2, focusing especially on in-plane/out-of-plane anisotropies. We find that the hole-mediated RKKY exchange interaction for in-plane impurity-spin components decays with the power law R −5/2 as a function of distance R, which deviates from the R −2 power law normally exhibited by a two-dimensional Fermi liquid. In contrast, the out-of-plane spin response shows the familiar R −2 long-range behavior. We also use the spin susceptibility to define a collective g-factor for hole-doped MoS2 systems and discuss its density-dependent anisotropy.

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Section: B Spin Susceptibility For a Multi-band Systemmentioning

confidence: 71%

Spin susceptibility of two-dimensional transition-metal dichalcogenides

2014

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“…Bulk MoS 2 has an indirect gap, while monolayer MoS 2 , which can be isolated by exfoliation techniques similar to graphene, is a direct-gap semiconductor with a gap of 1.9 eV. 7 Due to the large carrier mobility 8 , high current carrying capacity 9 , strong spin-orbit coupling, and coupling of spin and valley degrees of freedom, monolayer MoS 2 may become a replacement of graphene or even a candidate for the exploitation of novel valleytronic devices.…”

Section: Introductionmentioning

confidence: 99%

Linear magnetotransport in monolayerMoS2

Wang

Lei

2015

Phys. Rev. B

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A momentum balance equation is developed to investigate the magnetotransport properties in monolayer molybdenum disulphide when a strong perpendicular magnetic field and a weak inplane electric field are applied simultaneously. At low temperature, in the presence of intravalley impurity scattering Shubnikov de Haas oscillation shows up accompanying by a beating pattern arising from large spin splitting and its period may halve due to high-order oscillating term at large magnetic field for samples with ultrahigh mobility. In the case of intervalley disorders, there exists a magnetic-field range where the magnetoresistivity almost vanishes. For low-mobility layer, a phaseinversion of oscillating peaks is acquired in accordance with recent experiment. At high temperature when Shubnikov de Haas oscillation is suppressed, the magnetophonon resonances induced by both optical phonons (mainly due to homopolar and Fröhlich modes) and acoustic phonons (mainly due to intravalley transverse and longitudinal acoustic modes) emerge for suspended system with high mobility. For the single layer on a substrate, another resonance due to surface optical phonons may occur, resulting in a complex behavior of the total magnetoresistance. The beating pattern of magnetophonon resonance due to optical phonons can also be observed. However, for nonsuspended layer with low mobility, the magnetoresistance oscillation almost disappears and the resistivity increases with field monotonously.

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“…For parameters of MoS 2 [15,23,28], we obtain β ≈ 0.84 and thus σ ≈ σ 0 . There is thus a clear difference modeling MoS 2 with or without the mixing parameter β in the optical bulk absorption.…”

Section: A Dissipative Responsementioning

confidence: 68%

Universal absorption of two-dimensional systems

2015

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We discuss the optical conductivity of several noninteracting two-dimensional semiconducting systems focusing on gapped Dirac and Schrödinger fermions as well as on a system mixing these two types. Close to the band gap, we can define a universal optical conductivity quantum of σ 0 = 1 16 e 2 for the pure systems. The effective optical conductivity then depends on the degeneracy factors g s (spin) and g v (valley) and on the curvature around the band gap ν, i.e., it generally reads σ = g s g v νσ 0 . For a system composed of both types of carriers, the optical conductivity becomes nonuniversal.

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Plasmons and screening in a monolayer of MoS2

Cited by 124 publications

References 57 publications

Spin susceptibility of two-dimensional transition-metal dichalcogenides

Spin susceptibility of two-dimensional transition-metal dichalcogenides

Linear magnetotransport in monolayerMoS2

Universal absorption of two-dimensional systems

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