1981
DOI: 10.1002/app.1981.070260620
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Plasma etching durability of poly(methyl methacrylate)

Abstract: SynopsisThe decomposition of poly(methy1 methacrylate) (PMMA), as a positive resist, in CF4/02 plasma etching has been studied in the thin film state in order to clarify the factors influencing the dry etching durability of resists. It becomes clear that the major PMMA decomposition in CF4/02 plasma etching proceeds by the mechanism of random chain scission because very small kineticichain lengths are estimated from the gel permeation chromatography data. The Arrhenius plots for the plasma etching rate of PMMA… Show more

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Cited by 44 publications
(19 citation statements)
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References 18 publications
(3 reference statements)
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“…Harada [91] reported activation energies for PMMA in 0 2 / C F 4 plasmas which varied with gas feed composition and rf power. The assumption is that the activation energy is not temperature dependent.…”
Section: Temperature Dependencementioning
confidence: 99%
See 1 more Smart Citation
“…Harada [91] reported activation energies for PMMA in 0 2 / C F 4 plasmas which varied with gas feed composition and rf power. The assumption is that the activation energy is not temperature dependent.…”
Section: Temperature Dependencementioning
confidence: 99%
“…The activation energy of PMMA decreases for temperatures above the glass transition temperature, about 388 K [34,91]. This may be due to increased molecular mobility of polymers and increased probability of chemical reaction above T g [91].…”
Section: Plasma Etching Of Organic Polymersmentioning
confidence: 99%
“…20 Since the bent point does not coincide with Tc of three homopolymers in Table IV, it is reasonable that the depropagation is not merely the depolymerization to form monomers. He speculated the bent point was a critical temperature and was associated with glass transition temperature at which molecular mobiliti of polymers abruptly increased.…”
Section: ) Temperature Dependence Of Dry Etching Ratementioning
confidence: 98%
“…20 If the thickness reduction is caused by the reaction occurring in the bulk of resist film, the thickness will not decrease linearly with an increase of the exposure time. As was observed with the UV light from the deuterium discharge lamp by the present authors, far UV light, which was emitted from the oxygen plasma, may also contribute to the thickness reduction.…”
Section: B Durability Against Oxygen Plasma 1) Measurement Of Dry Etmentioning
confidence: 99%
“…These radicals react with oxygen molecules from the plasma to form carbonyl and alcohol groups. [8][9][10][11][12][13][14][15] Two separate mechanisms can account for the observed maximum. The desorption of these volatile products requires sufficient energy that must be provided by either ion bombardment or sample heating.…”
Section: Introductionmentioning
confidence: 99%