IEEE Trans. Electron Devices
 2023
DOI: 10.1109/ted.2023.3319302
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Piezoelectric Field Effect and Field-Effect Transistors Based on MoSi22N4, MoSi2P4, and MoGe2N4 Monolayers

Hesameddin Adib,
Mohsen Mazaherifar,
Shoeib Babaee Touski
et al.
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