Physical, Mechanical, and Structural Properties of Highly Efficient Nanostructured n- and p-Silicides for Practical Thermoelectric Applications

Gelbstein, Yaniv; Tunbridge, Jonathan; Dixon, R. W.; Reece, Mike; Ning, Huanpo; Gilchrist, Robert; Summers, Richard; Agote, I.; Lagos, Miguel; Simpson, Kevin; Rouaud, Cédric; Feulner, P.; Rivera, Sergio; Torrecillas, Ramón; Husband, Mark; Crossley, Julian; Robinson, Ivan

doi:10.1007/s11664-013-2848-9

Cited by 124 publications

(76 citation statements)

References 22 publications

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“…Several classes of thermoelectric materials, such as skutterudite [5,6], tellurides [7][8][9][10], half-Heuslers [11,12], and silicides [13,14], have been modified to reach high ZT value. Recently, ternary diamond-like semiconductor of Cu 2 SnSe 3 has emerged as a new potential thermoelectric material due to its relatively high carrier mobility and quite low thermal conductivity.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Thermoelectric Properties of Graphene/Cu2SnSe3 Composites

Zhao

Wang

2017

Crystals

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Cu 2 SnSe 3 material is regarded as a potential thermoelectric material due to its relatively high carrier mobility and low thermal conductivity. In this study, graphene was introduced into the Cu 2 SnSe 3 powder by ball milling, and the bulk graphene/Cu 2 SnSe 3 thermoelectric composites were prepared by spark plasma sintering. The graphene nanosheets distributed uniformly in the Cu 2 SnSe 3 matrix. Meanwhile, some graphene nanosheets tended to form thick aggregations, and the average length of these aggregations was about 3 µm. With the fraction of graphene increasing, the electrical conductivity of graphene/Cu 2 SnSe 3 samples increased greatly while the Seebeck coefficient was decreased. The introduction of graphene nanosheets can reduce the thermal conductivity effectively resulting from the phonon scattering by the graphene interface. When the content of graphene exceeds a certain value, the thermal conductivity of graphene/Cu 2 SnSe 3 composites starts to increase. The achieved highest figure of merit (ZT) for 0.25 vol % graphene/Cu 2 SnSe 3 composite was 0.44 at 700 K.

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Section: Introductionmentioning

confidence: 99%

Enhanced Thermoelectric Properties of Graphene/Cu2SnSe3 Composites

Zhao

Wang

2017

Crystals

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“…Among the investigated various systems of TE materials, silicides [6][7][8][9], half-heuslers [10,11], and tellurides (e.g., of Bi [12][13][14], Pb [15][16][17][18] and Ge [19,20]) have been widely studied and some have been practically applied in TEGs. Besides, a number of materials featuring excellent TE properties (high ZT value) and a relatively lower cost, low toxicity, and good mechanical properties, such as filled skutterudite (SKD), also attract extensive attention and have been actively pursued for being converted into TEGs [21][22][23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Study on the High Temperature Interfacial Stability of Ti/Mo/Yb0.3Co4Sb12 Thermoelectric Joints

Bai

Xia

et al. 2017

Applied Sciences

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Abstract:To improve the interfacial stability at high temperatures, n-type skutterudite (SKD) thermoelectric joints with sandwich structures of Ti/Mo/Yb 0.3 Co 4 Sb 12 were successfully designed and fabricated. In this structure, Mo and Ti were introduced as the barrier layer with the goal of suppressing the interfacial diffusion and the buffer layer with the goal of enhancing the bonding strength, respectively. To evaluate the high temperature interfacial behavior of the Ti/Mo/Yb 0.3 Co 4 Sb 12 joints, thermal shocking between 0 • C and 600 • C and isothermal aging at a temperature range of 550 • C to 650 • C were carried out in vacuum. During the isothermal aging process, Ti penetrates across the Mo layer, and finally diffuses into the Yb 0.3 Co 4 Sb 12 matrix. By increasing the isothermal aging time, Ti continuously diffuses and reacts with the elements of Sb and Co in the matrix, consequently forming the multilayer-structured intermetallic compounds of Ti 3 Sb/Ti 2 Sb/TiCoSb. Diffusion kinetics was investigated and it was found that the interfacial evolution of the Ti/Mo/Yb 0.3 Co 4 Sb 12 joints was a diffusion-controlling process. During the diffusion process, the formed Mo-Ti buffer layer acts as a damper, which greatly decelerates the diffusion of Ti towards the Yb 0.3 Co 4 Sb 12 matrix at high temperatures. Meanwhile, it was found that the increase in the contact resistivity of the joints mainly derives from the inter-diffusion between Ti and Yb 0.3 Co4Sb 12 . As a result, the Ti/Mo/Yb 0.3 Co 4 Sb 12 joint demonstrates the excellent stability of the interfacial contact resistivity. Service life prediction was made based on the stability of the contact resistivity, and it was found that the Ti/Mo/Yb 0.3 Co 4 Sb 12 joint is qualified for practical applications at 550 • C.

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“…Incomplete Mg-Si reaction leads to reduction of Seebeck coefficient, while insufficient density leads to reduction in electric conductivity. The best values were obtained for n-type Mg 2 Si doped with 3% Bi with a Seebeck coefficient S = −0.2 mV/K and electric output power of more than 6 µW reaching ZT = 0.45, a little smaller than reported in a recent paper [39].…”

Section: Discussionmentioning

confidence: 54%

Thermoelectric Properties of Mg2Si Produced by New Chemical Route and SPS

et al. 2014

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This paper reports about a new synthesis method for preparing Mg 2 Si in an efficient way. The intermetallic Mg 2 Si-phase forms gradually from a mixture of Mg and Si fine powder during exposure to hydrogen atmosphere, which reacts in a vacuum vessel at 350 °C. The resulting powder has the same particle size (100 µm) compared with commercial Mg 2 Si powder, but higher reactivity due to large surface area from particulate morphology. Both types of powders were compacted by spark plasma sintering (SPS) experiments at 627, 602, 597, and 400 °C for 600 s with a compaction pressure of 80 MPa. The thermoelectric characterization was performed with low and high temperature gradients of ΔT = 10 K up to 600 K. The results confirmed a Seebeck coefficient of −0.14 mV/K for specimens sintered from both powders. The small difference in total performance between purchased and produced power is considered to be due to the effect of impurities. The best values were obtained for n-type Mg 2 Si doped with 3% Bi yielding a Seebeck coefficient of −0.2 mV/K, ZT = 0.45) and electric output power of more than 6 µW. OPEN ACCESSInorganics 2014, 2 352

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Physical, Mechanical, and Structural Properties of Highly Efficient Nanostructured n- and p-Silicides for Practical Thermoelectric Applications

Cited by 124 publications

References 22 publications

Enhanced Thermoelectric Properties of Graphene/Cu2SnSe3 Composites

Enhanced Thermoelectric Properties of Graphene/Cu2SnSe3 Composites

Study on the High Temperature Interfacial Stability of Ti/Mo/Yb0.3Co4Sb12 Thermoelectric Joints

Thermoelectric Properties of Mg2Si Produced by New Chemical Route and SPS

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