Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage

Ziegler, Mathias; Hempel, Martin; Larsen, Henning; Tomm, Jens W.; Andersen, Peter E.; Clausen, Sønnik; Elliott, Stella N.; Elsaesser, Thomas

doi:10.1063/1.3463039

Cited by 34 publications

(32 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The observed τ P,int = 180 ns matches the values obtained during spatially integrated measurements with a fast photodiode for similar devices. 13 The value of τ P = 33 ns is close to the smallest value ever observed for this type of device in a situation, when almost the entire emitter width was affected by COD. 13 Thus, it is highly likely that the local decay time τ P = 33 ns (at the defect site) is the time the material needs to become (locally) opaque for laser emission.…”

mentioning

confidence: 88%

“…13 The value of τ P = 33 ns is close to the smallest value ever observed for this type of device in a situation, when almost the entire emitter width was affected by COD. 13 Thus, it is highly likely that the local decay time τ P = 33 ns (at the defect site) is the time the material needs to become (locally) opaque for laser emission. The comparison of the lateral extension of the μPL damage pattern [ Fig.…”

mentioning

confidence: 88%

“…As a result, we observe an increased NF intensity at (still) undamaged facet areas. 7,13 This in turn results in a lower than expected power density at the initial defect.…”

mentioning

confidence: 99%

“…The value for the temperature difference T = 1217 K is taken from Ref. 13 The defect volume V is the damaged area A dark in the emitter plane times a thickness of 1 μm (∼ waveguide thickness). The value for the final defective area A dark,final = 139 μm 2 is taken from the μPL measurement [ Fig.…”

mentioning

confidence: 99%

See 3 more Smart Citations

Near-field dynamics of broad area diode laser at very high pump levels

et al. 2011

Self Cite

View full text Add to dashboard Cite

Near-field properties of the emission of broad area semiconductor diode lasers under extremely high pumping of up to ∼50 times the threshold are investigated. A transition from a gain to thermally-induced index guiding is shown under operation with single pulses of 300 ns duration. At highest output powers, catastrophic optical damage is observed which is studied in conjunction with the evolution of time-averaged filamentary near-field properties. Dynamics of the process is resolved on a picosecond time scale. © 2011 Author(s)

show abstract

mentioning

confidence: 88%

mentioning

confidence: 88%

“…As a result, we observe an increased NF intensity at (still) undamaged facet areas. 7,13 This in turn results in a lower than expected power density at the initial defect.…”

mentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Near-field dynamics of broad area diode laser at very high pump levels

et al. 2011

Self Cite

View full text Add to dashboard Cite

show abstract

“…9 The COD process can be timesliced by stopping the degradation at the pulse end and reviving it during the subsequent pulse, which we call COD reignition. This concept was verified earlier.…”

Section: Methodsmentioning

confidence: 99%

Near-field evolution in strongly pumped broad area diode lasers

et al. 2012

Self Cite

View full text Add to dashboard Cite

Many applications such as pumping of solid state lasers or ignition of explosives require high optical output powers during a short period. Pulsed operated diode lasers meet these requirements. They can be driven at elevated power levels, well above the ones specified for continuous wave (cw) operation. The optical near-field intensity of a diode laser in this operation regime is a key parameter since it determines the beam properties of the device. High power AlGaAs/GaAs quantum well broad area diode lasers are subjected to single pulse step tests carried out up to and beyond their ultimate limits of operation. Laser near-fields are monitored on a picosecond time scale using a streak-camera setup during pulse currents of up to ~50 times the threshold current. A transition from gain guiding to thermally-induced index guiding of the near-field is shown. Further power increase is prevented by catastrophic optical damage (COD). This sudden failure mechanism is studied in conjunction with filamentary properties of the near-field. The defect growth dynamics resolved on the picosecond time scale is used to gather inside into the physics behind COD.

show abstract

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

View full text Add to dashboard Cite

Semiconductor lasers are the most efficient manmade narrow-band light sources and convert up to threequarters of electric energy into light. High-power diode lasers are characterized by very high internal power densities in their small cavity, resulting in local heating and sometimes device degradation. Catastrophic optical damage (COD) of diode lasers is a relevant degradation mechanism and limit for reaching ultrahigh optical powers. An overview is given on research activities targeting the mechanisms being relevant for the COD process in GaAs-based diode lasers emitting in the 630-1100 nm range. The discussion of experiments, where COD is artificially provoked, represents the main topic. The sequence of events and fast kinetics taking place on a nanosecond to microsecond time scale are addressed. A particular emphasis is laid on recent experimental work performed in the authors' laboratories. Paving the way for knowledge-based solutions towards more robust diode lasers represents the ultimate goal of this work. COD diagram determined for a batch of broad-area AlGaAs diode lasers. The time to COD within a single current pulse is plotted versus the actual average optical power in the moment when the COD takes place. Full circles stand for clearly identified COD events (right ordinate), whereas open circles (left ordinate) represent the pulse duration in experiments, where no COD has been detected. A borderline (gray) exists between two regions, i. e., parameter sets, of presence (orange) and absence of COD (blue). This borderline is somewhat blurred because of the randomness in filamentation of the laser nearfield and scatter in properties of the involved individual devices.

show abstract

Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage

Abstract: Elsaesser, T. (2010). Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage. Applied Physics Letters, 97(2), 021110. https://doi

Cited by 34 publications

References 16 publications

Near-field dynamics of broad area diode laser at very high pump levels

Near-field dynamics of broad area diode laser at very high pump levels

Near-field evolution in strongly pumped broad area diode lasers

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Contact Info

Product

Resources

About