2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2019
DOI: 10.1109/sispad.2019.8870391
|View full text |Cite
|
Sign up to set email alerts
|

Physical Insights into the Transport Properties of RRAMs Based on Transition Metal Oxides

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(1 citation statement)
references
References 13 publications
0
1
0
Order By: Relevance
“…STT-MRAM has a drawback of reliability, while PCM has a disadvantage of an extensive write latency. Therefore, an alternative of a nonvolatile memory device for the next generation has been proposed by researchers in the form of resistive random-access memory (RRAM) devices with the advantages of low power consumption, high scalability, simple structure, easy fabrication, small size, and low cost. ,, ,,,, Applications of RRAMs include but are not limited to aerospace, chaotic circuits, neuromorphic computing, , memory devices, ,, ,, , and logical circuit displays. RRAMs are usually fabricated as a vertical device with a functional layer of an insulator/semiconductor sandwiched between two metallic electrodes; however, it can also have a planar structure. RRAMs can be further classified into nonvolatile and volatile memory devices on the basis of applied electric field, because nonvolatile memories can retain data even without the application of an external power supply, while volatile memories cannot retain their stored data in the absence of applied voltage. RRAMs usually operate reversibly with...…”
Section: Introductionmentioning
confidence: 99%
“…STT-MRAM has a drawback of reliability, while PCM has a disadvantage of an extensive write latency. Therefore, an alternative of a nonvolatile memory device for the next generation has been proposed by researchers in the form of resistive random-access memory (RRAM) devices with the advantages of low power consumption, high scalability, simple structure, easy fabrication, small size, and low cost. ,, ,,,, Applications of RRAMs include but are not limited to aerospace, chaotic circuits, neuromorphic computing, , memory devices, ,, ,, , and logical circuit displays. RRAMs are usually fabricated as a vertical device with a functional layer of an insulator/semiconductor sandwiched between two metallic electrodes; however, it can also have a planar structure. RRAMs can be further classified into nonvolatile and volatile memory devices on the basis of applied electric field, because nonvolatile memories can retain data even without the application of an external power supply, while volatile memories cannot retain their stored data in the absence of applied voltage. RRAMs usually operate reversibly with...…”
Section: Introductionmentioning
confidence: 99%