Photovoltaic properties of CdS/Si multi-interface nanoheterojunction with incorporation of Cd nanocrystals into the interface

Li, Yong; Song, Yunfei; Zhou, Fengqun; Ji, Pengfei; Tian, Mingli; Wan, Mingli; Huang, Hong-Chun; Li, Xinjian

doi:10.1016/j.matlet.2015.11.064

Cited by 28 publications

(2 citation statements)

References 29 publications

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“…[1,2] Silicon nanowire (Si NW) heterojunction with III-V or II-VI semiconductor is a promising candidate for band gap engineered devices. [3][4][5] One-dimensional (1D) vertically aligned Si NWs have shown promising potential with enhanced performance owing to their large interfacial area and providing vectorial pathways for charge transport. It also provides an excellent template for the fabrication of diverse heterojunctions.…”

Section: Introductionmentioning

confidence: 99%

Electricity Generation from Atmospheric Moisture Using a CdS/p‐Si Nanowire Hetero‐Junction Device

et al. 2022

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One‐dimensional heterojunction devices are gaining attention because of improved carrier collection which results in improving the overall efficiency of a device. Herein, we report the synthesis of a CdS/p‐Si nanowire (NW) hetero‐junction device by wet‐chemical methods and their potential application for electricity generation from atmospheric moisture. A single CdS/p‐Si NWs hetero‐junction based moisture enabled electricity generator (MEG) device exhibits a saturated maximum output voltage in the range of 250–300 mV and a saturation current of ∼0.2 μA in presence of humid conditions. This primitive module acts as a promising candidate for future energy generation devices constituting of individual units connected either through simple series or parallel connection to scale up high electrical power.

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Section: Introductionmentioning

confidence: 99%

Electricity Generation from Atmospheric Moisture Using a CdS/p‐Si Nanowire Hetero‐Junction Device

et al. 2022

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“…For the photoresistor, many methods are adopted to increase the sensitivity, for example making the CdS nanostructures to increase the sensitivity surface, such as nanowires, nanorods, nano owers, and so on [8][9][10]. And it was proved that the photocurrent to the dark current ratio of the CdS based photodetectors can be further enhanced through the formation of heterojunctions [11,12]. Zinc oxide (ZnO) is a functional semiconductor with the bandgap of 3.37 eV, and the conduction band and valence band of the ZnO are 0.2 and 0.8 eV lower than those of CdS respectively, therefore the ZnO/CdS heterojunctions might be a promising structure for the photosensitive resistor of visible light [13,14].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and photosensitivity of ZnO/CdS/silica nanopillars based photoresistor

Liu

2021

J Mater Sci: Mater Electron

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A kind of Zinc oxide (ZnO)/Cadmium sul de (CdS)/Silica nanopillars structure is fabricated to photoresistor for the rst time. The silica wafer with countless nanopillars is used as the substrate for photoresistor. CdS and ZnO lm are deposited by frequency (RF) magnetron sputtering onto the silica nanopillars surface to form ZnO/CdS/Silica nanopillars structure. The ZnO nanowires also can grow on the CdS surface by the hydrothermal reaction to ZnO nanowires/CdS/Silica nanopillars structures. The Xray diffraction curves show that the ZnO and CdS lm both on the planar silica and nanopillar silica surface are well-crystallized. The ZnO lm deposition can reduce the re ection and increase the absorption of the incoming light, especially for the light with a wavelength less than 350 nm. And the ZnO/CdS heterojunction structure can retard the recombination probability of the photon-generated carries and prolong the lifetime of the photon-generated carriers, which lending to a remarkable photocurrent improvement. The photosensitivity property testing results show that the ZnO nanowires/CdS/Silica nanopillars structure has the best photosensitivity response of 135 for the white light with 10 mW/cm 2 illumination.

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Fabrication and Photovoltaic Effect of CdS/Silicon Nanopillars Heterojunction Solar Cell

Liu

Wang

et al. 2016

ChemistrySelect

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A 200 nm thickness layer of Cadmium sulfide (CdS) film covers on the silicon nanopillars surface to heterojunction solar cell. The nanopillars with the large surface ratio can increase the heterojunction surface and the light absorption, which can improve the photovoltaic performance of solar cell. Silicon nanopillars are fabricated by Cesium Chloride self‐assembly lithography and inductively coupled plasma dry etching as substrate. CdS film covers the silicon nanopillars surface by the RF magnetron sputtering using CdS ceramic target. The X‐ray diffraction patterns of the nanopillar and planar substrates after CdS film covering indicate that all the deposited films are crystal. The nanopillars wafer has lower reflectance than the planar one both before and after the CdS film covering for the wavelength ranging from 350 to 1050 nm. With this method, the nanopillar based CdS/Silicon heterojunction solar cell has the better photovoltaic performance than the planar one. The Jsc increases from 7.12 to 13.92 mA/cm2 and the energy conversion efficiency increases from 1.32 % to 1.83 %. The large surface ratio nanopillars might be a potential substrate for high efficiency heterojunction solar cell.

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Photovoltaic properties of CdS/Si multi-interface nanoheterojunction with incorporation of Cd nanocrystals into the interface

Cited by 28 publications

References 29 publications

Electricity Generation from Atmospheric Moisture Using a CdS/p‐Si Nanowire Hetero‐Junction Device

Electricity Generation from Atmospheric Moisture Using a CdS/p‐Si Nanowire Hetero‐Junction Device

Fabrication and photosensitivity of ZnO/CdS/silica nanopillars based photoresistor

Fabrication and Photovoltaic Effect of CdS/Silicon Nanopillars Heterojunction Solar Cell

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