Photovoltaic p-i-n Structure of Sb[sub 2]S[sub 3] and CuSbS[sub 2] Absorber Films Obtained via Chemical Bath Deposition

Abstract

Chemically deposited, near-intrinsic Sb 2 S 3 thin films and p-CuSbS 2 thin films obtained through heating Sb 2 S 3 -CuS thin films have been integrated into a p-i-n structure: SnO 2 :F-͑n͒CdS:In-͑i͒Sb 2 S 3 -͑p͒CuSbS 2 -Ag. An open-circuit voltage of 345 mV has been observed under an intensity of illumination of 1 kW m −2 using a tungsten-halogen lamp. The short-circuit current was 0.2 mA/cm 2 . Structural, optical, and electrical properties of Sb 2 S 3 and CuSbS 2 are presented. X-ray photoelectron spectroscopy depth profile on the CuSbS 2 film indicated uniformity in composition with respect to Cu, Sb, and S atoms through the film thickness. X-ray diffraction studies using standard mode and grazing incidence at fixed angles showed the layer structure of the photovoltaic p-i-n device.

Inverse Design of High Absorption Thin‐Film Photovoltaic Materials

“…Its indirect band gap at 1.44 eV (Table S2) and delayed rapid onset at E g + 0.14 eV slightly compromises absorption in a critical portion of the solar spectrum, which would limit performance in very thin devices. [ 26 ] From electrical measurements, we estimate a rather low hole carrier mobility (0.1 cm 2 /Vs) in CuSbS 2 (Table S2), although a value nearly an order of magnitude higher has been reported in -VI (blue stars) materials (V = P, As, Sb, Bi and VI = S, Se). The available experimental gaps are shown in parenthesis, and corresponding references are indicated by the superscript letters, i.e., a, [ 15 ] b, [ 16 ] c, [ 17 ] d, [ 18 ] e, [ 19 ] f, [ 20 ] g, [ 21 ] h, [ 22 ] I, [ 23 ] j, [ 24 ] and k. [ 25 ] (b) Experimental (circles) and calculated (dashed lines, same as in Figure 1 a) …”

Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers

“…In the literature, fabrication of the copper antimony sulfide thin films are found using both physical and chemical deposition techniques such has thermal evaporation [13][14][15], thermal diffusion [16], spin coating [17], chemical bath deposition [18], spray pyrolysis [19], electrochemical deposition [20,21] and hybrid inks method [22], etc. For example, Rabhi et al reported the copper antimony sulfide films fabricated via a thermal evaporation technique [13,14].…”

Hybrid photovoltaic cells based on ZnO/Sb2S3/P3HT heterojunctions

“…Although the crystallinity of the Sb 2 S 3 films improved significantly after thermal annealing, the electrical conductivity shows a little increase. The low conductivities of Sb 2 S 3 films indicate that the prepared Sb 2 S 3 films can be classified as nearly intrinsic semiconductors [27].…”