We report on the first observation of "hole" whispering gallery lasers from semiconductor microcavities with three dimensional optical confinement, with thresholds potentially reducible to micro-to-nano ampere regimes according to a quadratic size-dependent reduction, due to ideal quantum wire properties of the naturally formed photonic quantum rings before imminent recombination in a dynamic steady state fashion. If the device size grows over a critical diameter, the quantum ring whispering gallery then begins to disappear. However, cooperative small hole arrays like 256×256 quantum ring emitters avoid the criticality and open a possibility of constructing practical dense electro-pumped micro-to-nano watt emitter arrays, amenable to mega-to-giga ring emitter chip development via present fabrication techniques.PACS numbers : 42.55.Sa, 42.60.Da, 78.66.-w Lord Rayleigh's "concave" whispering gallery (WG) mode phenomenon [1] has triggered the optoelectronic large-scale integration (LSI) circuit research for applications in next-generation photonic switching and interconnect technologies to remove the so called electronic bottleneck, by developing low-threshold two dimensional (2D) whispering gallery mode semiconductor lasers in the last decade [2][3][4][5]. The LSI quest for electro-pumped emitter arrays has also evolved into the array development of 1D vertical cavity surface emitting lasers, for instance the 16×16 array work with a limited performance due to thermal instabilities [6]. The laser array integrations in fact turned out to be inferior even to earlier decade-long efforts of the quantum well Stark shift modulator LSI developments undertaken since mid 1980s [7]. Recent reviews on the 3D optical interconnect technology now predict that the