Photonic Potentiation and Electric Habituation in Ultrathin Memristive Synapses Based on Monolayer MoS₂

Abstract

Monolayer of 2D transition metal dichalcogenides, with a thickness of less than 1 nm, paves a feasible path to the development of ultrathin memristive synapses, to fulfill the requirements for constructing large-scale high density 3D stacking neuromorphic chips. Herein, memristive devices based on monolayer n-MoS on p-Si substrate with a large self-rectification ratio, exhibiting photonic potentiation and electric habituation, are successfully fabricated. Versatile synaptic neuromorphic functions, such as potentiation/habituation, short-term/long-term plasticity, and paired-pulse facilitation, are successfully mimicked based on the inherent persistent photoconductivity performance and the volatile resistive switching behavior. These findings demonstrate the potential applications of ultrathin transition metal dichalcogenides for memristive synapses. These memristive synapses with the combination of photonic and electric neuromorphic functions have prospective in the applications of synthetic retinas and optoelectronic interfaces for integrated photonic circuits based on mixed-mode electro-optical operation.

A New Memristor with 2D Ti3C2Tx MXene Flakes as an Artificial Bio‐Synapse

“…The XRD and Raman results are consistent with those of crystalline Ti 3 C 2 T x flakes, indicating that the prepared Ti 3 C 2 T x flakes have high quality. The SEM images in Figure e and Figure S1b in the Supporting Information show the surface topography of the Ti 3 C 2 T x flakes on the Pt substrate prepared by the spin‐coating method …”

An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor

“…[61] UV-vis 0.6 -√ --Au/In 2 O 3 /ZnO/FTO [14] UV 0.4-4 √ √ --W/MoS 2 /SiO 2 /p-Si [62] UV 0.11 √ √ --Au/TiO 2 /Au [63] Violet 0.5 -√ --ITO/MWCNTs/CdS [64] Blue --√ --Pt/HfO 2 /p-Si [65] Blue 0.01-5 -√ --ITO/Si-NC/Al [12] UV-NIR 18 √ √ --ITO/ZnO/Si-NCs/CBP/MoO 3 /Au [66] UV -√ √ --Al/ZnO/PDR1A/ITO [67] Green 180 -√ --ITO/ZnO 1−x /AlO y /Al [ [61] UV-vis 0.6 -√ --Au/In 2 O 3 /ZnO/FTO [14] UV 0.4-4 √ √ --W/MoS 2 /SiO 2 /p-Si [62] UV 0.11 √ √ --Au/TiO 2 /Au [63] Violet 0.5 -√ --ITO/MWCNTs/CdS [64] Blue --√ --Pt/HfO 2 /p-Si [65] Blue 0.01-5 -√ --ITO/Si-NC/Al [12] UV-NIR 18 √ √ --ITO/ZnO/Si-NCs/CBP/MoO 3 /Au [66] UV -√ √ --Al/ZnO/PDR1A/ITO [67] Green 180 -√ --ITO/ZnO 1−x /AlO y /Al [ …”

A Fully Printed Flexible MoS2 Memristive Artificial Synapse with Femtojoule Switching Energy

“…Among the conventional RS media, including transition metal oxides (TMOs, e.g., HfO 2 , Al 2 O 3 , TiO 2 ), [4,9,10,16] polymers, [15] and two-dimensional materials (2DMs), [7,8,[11][12][13][14][17][18][19][20][21] the latter shows great potential to realize printed memristors with their solution processability and inherent flexibility. [9,30,31] In recent years, molybdenum disulfide (MoS 2 ) has emerged as a high-performance RS material [8,[11][12][13][14][17][18][19][20][21] with high switching speed (<15 ns), [13] multiple gate-tuneable resistive states, [8,11,12] and mechanical flexibility (1200 bending cycles). [22][23][24][25][26][27][28][29] However, the presence of defect density/vacancies in solution exfoliated 2DM crystals is found to compromise the electrical performance.…”

“…[1][2][3][4][5] In particular in the non-conventional space of smart applications requiring conformal attachment on non-flat surfaces such as on-body wearables, the notion of system on plastics (SOP) incorporating neuromorphic computing provides a potential solution. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] However, current memristor manufacturing technologies such as chemical vapor deposition (CVD), [7,8,[11][12][13] spin-coating, [14,15] or entire transfer [16] impose enormous challenges on flexible substrates as they suffer from high temperature, low yield and complex sacrificial layer removal. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]…”