Photonic Band Gap in Anodic Porous Alumina with Extremely High Aspect Ratio Formed in Phosphoric Acid Solution

Masuda, Hideki; Ohya, Masayuki; Nishio, Kazuyuki; Asoh, Hidetaka; Nakao, Masashi; Nohtomi, Masaya; Yokoo, Akihiko; Tamamura, Toshiaki

doi:10.1143/jjap.39.l1039

Cited by 101 publications

(72 citation statements)

References 10 publications

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“…The uniform pores orderly aligned on the n-InP͑001͒ substrates and constructed a triangular lattice. These features are very similar to the Al 2 O 3 porous structures reported by Masuda et al 16 We have previously reported that the InP nanowalls were standing vertically to a ͑001͒ plane, keeping good uniformity over 19 m.…”

supporting

confidence: 87%

Electrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions

Sato

Fujino

Hashizume

2007

Electrochem. Solid-State Lett.

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A two-step electrochemical process using anodic and cathodic reactions was developed to form size-controlled nanostructures on InP͑001͒ substrates. After anodic formation of a nanopore array, the cathodic decomposition process was applied to reduce the thickness of InP nanowalls. The etching rate of the nanowalls was extremely small and strongly dependent on the cathodic bias and crystal orientations of the wall surface. Wall thickness could be controlled in the range of 10-30 nm by changing the cathodic bias and processing time. © 2007 The Electrochemical Society. ͓DOI: 10.1149/1.2713662͔ All rights reserved.Manuscript submitted November 9, 2006; revised manuscript received January 10, 2007. Available electronically March 13, 2007. High-density formation of semiconductor nanostructures has recently been intensely researched for applications such as photonic crystals, quantum and optoelectronic devices, and chemical and biochemical sensors. Mainstream approaches to forming semiconductor nanostructures have used conventional methods such as lithography, dry etching, or crystal growth processes. For example, reactive ionbeam etching ͑RIBE͒, molecular beam epitaxy ͑MBE͒, and metallorganic vapor phase epitaxy ͑MOVPE͒ are common techniques for this purpose in the semiconductor community. One possible alternative approach is to apply the electrochemical process to semiconductors. With this process, a wide variety of semiconductor nanostructures can be obtained by modifying the surface using electrochemical anodic and cathodic reactions. The electrochemical process seems to be extremely promising for creating semiconductor nanostructures due to its unique features such as being a lowtemperature process, causing low processing damage, and having a simple process and a low cost.The most well-known application of the electrochemical process is for forming a porous Si structure using the anodic reaction in an HF-based electrolyte.1-3 This has given a visible light-emitting property to Si by modifying the surface. Canham 3 reported that the photoluminescence ͑PL͒ peak obtained from porous Si showed a significant blue shift with reference to the bandgap energy of a bulk Si, showing evidence of quantum confinement in porous structures. Several groups later reported on porous structures made of III-V semiconductor materials such as GaAs, 4,5 GaP, 6,7 InP, [8][9][10]12 Up to the present, various crystal orientations and electrochemical conditions have been investigated on III-V materials to reveal structural properties and their tunability. We have recently succeeded in the anodic formation of arrays of straight nanopores on n-InP͑001͒ substrates. [13][14][15] The straightness of pores in the depth direction has been dramatically improved using an HCl-based electrolyte containing a small amount of HNO 3 , resulting in the formation of a high-density array of InP nanowalls with a high aspect ratio. These kinds of unique nanostructures have not been obtainable by other methods.In this article, we report size-controlled InP nan...

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supporting

confidence: 87%

Electrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions

Sato

Fujino

Hashizume

2007

Electrochem. Solid-State Lett.

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“…According to the growth model of AAO proposed by Masuda et al [9,10], morphology and arrangement of pores in the initial part of porous AAO are irregular. Following the formation of AAO, the morphology and the arrangement of pores in porous AAO are changed more and more regular because of the mechanical stress, which is associated with the volume expansion during the formation of AAO.…”

Section: Resultsmentioning

confidence: 99%

“…Anodic aluminum oxide (AAO) is a kind of self-organizing material with nanopore arrays [6][7][8][9][10][11]. The ideal model of AAO can be schematically represented as figure 1.…”

Section: Introductionmentioning

confidence: 99%

“…However, the geometry of porous AAO usually obtained is far from the idealized model and the irregular AAO is not an ideal template for the preparation of materials and devices in the scale of nanometer. Masuda et al [6,[8][9][10] had fabricated AAO with ideal nanopore arrays through molding process and two-step anodization process respectively. However, the two ways are very complex in operation.…”

Section: Introductionmentioning

confidence: 99%

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One-step anodization fabrication and morphology characterization of porous AAO with ideal nanopore arrays

Yang

Zhou

Tang

et al. 2007

Journal of Experimental Nanoscience

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A fabrication method for one-step anodization of an anodic aluminum oxide (AAO) template with nanopore arrays using pretreated high purity aluminum foil is reported in this article. Morphology of the AAO was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Results showed that porous AAO with ideal nanopore arrays can be fabricated by one-step anodization fabrication technology on high purity aluminum foil which had been anodized at 45 V direct current (DC), in 0 C, 0.5 M H 2 C 2 O 4 solution for 48 hours. The average pore diameter and the interpore distance were 80 nm and 120 nm, respectively. Nanopores in porous AAO had very narrow size distribution and were arranged into hexagonal array. The formation mechanism of nanopore arrays in porous AAO is discussed. Porous AAO with ideal nanopore arrays provide an ideal template for preparation of many one-dimensional nanomaterials. One-step anodization of AAO is a simpler procedure and more applicable in industrial application than the previous two-step anodization technology.

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“…Due to their low absorption coefficient, excellent thermal stability and easy handling, porous alumina structures could be potential materials for photonic crystals. However, since a perfect arrangement of porous alumina channels is required for 2-D PCs, only few studies on porous alumina photonic crystals exist [5][6][7]. To fabricate monodomain porous alumina structures, a method to pre-pattern the surface of aluminum before conventional anodization is a prerequisite.…”

Section: Introductionmentioning

confidence: 99%

Large-area porous alumina photonic crystals via imprint method

et al. 2002

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A perfect 2D porous alumina photonic crystal with 500 nm interpore distance was fabricated on an area of 4 cm 2 via imprint methods and subsequent electrochemical anodization. A 4'' imprint stamp consisting of a convex pyramid array was obtained by modern VLSI processing using DUV-lithography, anisotropic etching, LPCVD Si 3 N 4 deposition and wafer bonding. The optical properties of the porous alumina photonic crystal were measured with an infrared microscope in Γ-M direction. For both polarizations, a bandgap is observed at around 1 µm for r/a = 0.42. A reflectivity of almost unity for E-polarization in the region of the bandgap is a sign of the high quality of the structure, indicating almost no scattering losses. These experimental results could be correlated very well to the bandstructure as well as reflectivity calculations assuming a dielectric constant of ε = 2.0 for the anodized alumina.

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Photonic Band Gap in Anodic Porous Alumina with Extremely High Aspect Ratio Formed in Phosphoric Acid Solution

Cited by 101 publications

References 10 publications

Electrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions

Electrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions

One-step anodization fabrication and morphology characterization of porous AAO with ideal nanopore arrays

Large-area porous alumina photonic crystals via imprint method

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