Photon-triggered nanowire transistors

Abstract

Photon-triggered electronic circuits have been a long-standing goal of photonics. Recent demonstrations include either all-optical transistors in which photons control other photons or phototransistors with the gate response tuned or enhanced by photons. However, only a few studies report on devices in which electronic currents are optically switched and amplified without an electrical gate. Here we show photon-triggered nanowire (NW) transistors, photon-triggered NW logic gates and a single NW photodetection system. NWs are synthesized with long crystalline silicon (CSi) segments connected by short porous silicon (PSi) segments. In a fabricated device, the electrical contacts on both ends of the NW are connected to a single PSi segment in the middle. Exposing the PSi segment to light triggers a current in the NW with a high on/off ratio of >8 × 10. A device that contains two PSi segments along the NW can be triggered using two independent optical input signals. Using localized pump lasers, we demonstrate photon-triggered logic gates including AND, OR and NAND gates. A photon-triggered NW transistor of diameter 25 nm with a single 100 nm PSi segment requires less than 300 pW of power. Furthermore, we take advantage of the high photosensitivity and fabricate a submicrometre-resolution photodetection system. Photon-triggered transistors offer a new venue towards multifunctional device applications such as programmable logic elements and ultrasensitive photodetectors.

Transparent, Flexible Silicon Nanostructured Wire Networks with Seamless Junctions for High-Performance Photodetector Applications

“…The control experiment clearly demonstrates the importance of porosity in Si NW network for achieving high performance photodetectors, consistent with a previous report. 30 We have also tested traditional photodetector figure of merits such as responsivity and detectivity (Figure 2c,d). 13,38 The spectral responsivity Rλ is defined as Rλ= Jph/ Plight, where Jph = Iph/A is the photocurrent density; Iph, Plight and A are the photocurrent, input light intensity and the effective area of the device respectively.…”

Compositional and structural engineering of inorganic nanowires toward advanced properties and applications

“…The peak power of the pulsed pump laser is ~0.75 mW. Reproduced with permission . Copyright 2017, Nature Publishing Group.…”

“…Porous silicon (PSi) with many electronic states could be fabricated with a metal‐assisted chemical erosion method on crystal silicon (CSi) nanowires . Kim et al fabricated a hybrid CSi‐PSi‐CSi one‐dimensional nanostructure in which the PSi acted as a reservoir of high‐density localized electronic states and the CSi connected to electrodes acted as a carrier migration channel (Figure I‐J). Normally, the dark current was only a few picoamps even when a voltage bias was applied to the device due to the injected carriers being trapped in localized electronic states along the PSi segment.…”

“…Reproduced with permission. 150 Copyright 2017, Nature Publishing Group. NW, nanowire; SEM, scanning electron microscopy; TEM, tunneling electron microscopy nanowires.…”

Garther 2017 Топ Технологии: Их Анализ И Применение

“…Практическая реализация идеи замены электронов фотонами приводит к созда-нию компьютинга с быстродействием, близким к скорости света [15]. Корейские исследователи сделали еще один шаг к оп-тическим вычислениям.…”