Photoluminescence Switching Effect in a Two-Dimensional Atomic Crystal

Sun, Zheng; Xu, Ke; Liu, Chang; Beaumariage, Jonathan; Liang, Jierui; Fullerton‐Shirey, Susan K.; Shi, Zhe-Yu; Wu, Jian; Snoke, D. W.

doi:10.1021/acsnano.1c06016

Cited by 6 publications

(9 citation statements)

References 40 publications

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“…Several recent applications of electrolyte gating have demonstrated that the excitonic spectrum, one of the most prominent features of 2D semiconductors, can be efficiently tuned by electrolyte-gated doping. − Similarly, very detailed studies of the Raman spectra of TMDCs, summarized in Figure , demonstrated that while the in-plane vibrational mode (E 2g 1 ) is insensitive to doping, the out-of-plane vibrational mode (A 1g ) is highly tunable by electron (but not hole) doping. , Advances in electrolyte gating at ultramicroelectrodes enabled simultaneous electron tunneling across hexagonal boron nitride and measurement of a redox reaction rate to be realized . This study revealed unproven predictions from the Marcus–Hush theory of electron transfer, such as the limiting current plateauing, and provided a platform to study complex reaction mechanisms.…”

Section: Electrolyte Gating Of 2d Materialsmentioning

confidence: 99%

“…The robustness of the electrolyte gate and the insensitivity of its performance to the geometric configuration also facilitates in situ evaluation of the optical properties upon the applied voltage. These advantages have been utilized to achieve photoluminescence switching in monolayer WSe 2 , with on–off ratios considerably larger than those for a single gate, and to demonstrate the potential for integrating electrolyte gating in optoelectronic circuits …”

Section: Dual Gating Of 2d Materialsmentioning

confidence: 99%

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Electrolyte versus Dielectric Gating of Two-Dimensional Materials

Velický

2021

J. Phys. Chem. C

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Electrolyte gating has several advantages over the more conventional dielectric gating. The most important is the ability to induce large charge carrier densities with a fraction of the voltage required by a typical dielectric gate. For this reason, electrolyte gating has become a popular choice for scientists working on 2D materials research, where efficient and controllable charge doping by electrostatic gating is a highly desirable alternative to the conventional substituent doping implemented in bulk materials. In this Perspective, we compare electrolyte gating with dielectric gating and evaluate the strengths and weaknesses of both approaches. We highlight the recent progress in electrolyte gating and the scientific discoveries that it has helped achieve and outline the current and future trends in gating of 2D materials, including dual gating, electrochemically controlled optoelectronics, and electric field-effect-driven catalysis.

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Section: Electrolyte Gating Of 2d Materialsmentioning

confidence: 99%

Section: Dual Gating Of 2d Materialsmentioning

confidence: 99%

Electrolyte versus Dielectric Gating of Two-Dimensional Materials

Velický

2021

J. Phys. Chem. C

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“…This gating mechanism induces high sheet carrier densities (10 13 –10 14 cm –2 ) in various organic and inorganic semiconductors. , EDL gating is also used in fundamental research of low-dimensional materials. For example, this technique has been effective in controlling light scattering and emission, , surface plasmon resonance, ,, and the transition temperature for superconductivity ,, in layered materials including graphene, 2D metals, and transition-metal dichalcogenides (TMDs).…”

Section: Introductionmentioning

confidence: 99%

Impact of Large Gate Voltages and Ultrathin Polymer Electrolytes on Carrier Density in Electric-Double-Layer-Gated Two-Dimensional Crystal Transistors

Awate

Mostek

Kumari

et al. 2023

ACS Appl. Mater. Interfaces

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Electric-double-layer (EDL) gating can induce large capacitance densities (∼1−10 μF cm −2 ) in two-dimensional (2D) semiconductors; however, several properties of the electrolyte limit performance. One property is the electrochemical activity which limits the gate voltage (V G ) that can be applied and therefore the maximum extent to which carriers can be modulated. A second property is electrolyte thickness, which sets the response speed of the EDL gate and therefore the time scale over which the channel can be doped. Typical thicknesses are on the order of micrometers, but thinner electrolytes (nanometers) are needed for very-large-scale-integration (VLSI) in terms of both physical thickness and the speed that accompanies scaling. In this study, finite element modeling of an EDL-gated field-effect transistor (FET) is used to self-consistently couple ion transport in the electrolyte to carrier transport in the semiconductor, in which density of states, and therefore quantum capacitance, is included. The model reveals that 50 to 65% of the applied potential drops across the semiconductor, leaving 35 to 50% to drop across the two EDLs. Accounting for the potential drop in the channel suggests that higher carrier densities can be achieved at larger applied V G without concern for inducing electrochemical reactions. This insight is tested experimentally via Hall measurements of graphene FETs for which V G is extended from ±3 to ±6 V. Doubling the gate voltage increases the sheet carrier density by an additional 2.3 × 10 13 cm −2 for electrons and 1.4 × 10 13 cm −2 for holes without inducing electrochemistry. To address the need for thickness scaling, the thickness of the solid polymer electrolyte, poly(ethylene oxide) (PEO):CsClO 4 , is decreased from 1 μm to 10 nm and used to EDL gate graphene FETs. Sheet carrier density measurements on graphene Hall bars prove that the carrier densities remain constant throughout the measured thickness range (10 nm−1 μm). The results indicate promise for overcoming the physical and electrical limitations to VLSI while taking advantage of the ultrahigh carrier densities induced by EDL gating.

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“…PLs, are quenched. , In WSe 2 -based vdW heterostructures, the PLs exhibit varied characteristics by stacking with different materials, − by applying gate voltages, , or by introducing chemical doping. , But the tunability of the optical signals is poor: e.g., the PL on/off ratio was only ∼11 . Even though dual gates were applied on the WSe 2 , the ratio is slightly increased to 90 . Furthermore, in such a structural configuration, electrical signals are inaccessible.…”

mentioning

confidence: 99%

“…PLs, are quenched. 22,23 In WSe materials, 24−26 by applying gate voltages, 27,28 or by introducing chemical doping. 29,30 But the tunability of the optical signals is poor: e.g., the PL on/off ratio was only ∼11.…”

mentioning

confidence: 99%

A Bifunctional Optoelectronic Device for Photodetection and Photoluminescence Switching Based on Graphene/ZnTe/Graphene van der Waals Heterostructures

Wang,

Chen,

et al. 2023

ACS Nano

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Controlling the dynamic processes, such as generation, separation, transport, and recombination, of photoexcited carriers in a semiconductor is foundational in the design of various devices for optoelectronic applications. One may imagine that if different processes can be manipulated in one single device and thus generate useful signals, a multifunctional device can be realized, and the toolbox for integrated optoelectronics will be expanded. Here, we revealed that in a graphene/ZnTe/graphene van der Waals (vdW) heterostructure, the carriers can be generated by illumination from visible to infrared frequencies, and thus, the detected spectrum range extends to the communication band, well beyond the band gap of ZnTe (2.26 eV). More importantly, we are able to control the competition between separation and recombination of the photoexcited carriers by an electric bias along the thickness-defined channel of the ZnTe flake: as the bias increases, the photodetecting performance, e.g. response speed and photocurrent, are improved due to the efficient separation of carriers; synchronously, the photoluminescence (PL) intensity decreases and even switches off due to the suppressed recombination process. The ZnTe-based vdW heterostructure device thus integrates both photodetection and PL switching functions by manipulating the generation, separation, transport, and recombination of carriers, which may inspire the design of the next generation of miniaturized optoelectronic devices based on the vdW heterostructures made by various thin flakes.

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Photoluminescence Switching Effect in a Two-Dimensional Atomic Crystal

Cited by 6 publications

References 40 publications

Electrolyte versus Dielectric Gating of Two-Dimensional Materials

Electrolyte versus Dielectric Gating of Two-Dimensional Materials

Impact of Large Gate Voltages and Ultrathin Polymer Electrolytes on Carrier Density in Electric-Double-Layer-Gated Two-Dimensional Crystal Transistors

A Bifunctional Optoelectronic Device for Photodetection and Photoluminescence Switching Based on Graphene/ZnTe/Graphene van der Waals Heterostructures

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