Photoluminescence study of ZnO nanorods epitaxially grown on sapphire (112̄0) substrates

Zhang, B. P.; Bình, Nguyễn Thanh; Segawa, Y.; Kashiwaba, Y.; Haga, Koichi

doi:10.1063/1.1642755

Cited by 138 publications

(75 citation statements)

References 29 publications

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“…However, understanding the origin of intra band-gap states also requires investigating the dependence of PL emission on power, as was done for NWs in Refs. [17,28,[30][31][32].…”

Section: Introductionmentioning

confidence: 99%

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Photoluminescence of CdSe nanowires grown with and without metal catalyst

et al. 2011

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We present temperature and power dependent photoluminescence measurements on CdSe nanowires synthesized via vapor-phase with and without the use of a metal catalyst. Nanowires produced without a catalyst can be optimized to yield higher quantum efficiency, and narrower and spatially uniform emission, when compared to the catalyst-assisted ones. Emission at energies lower than the band-edge is also found in both cases. By combining spatially-resolved photoluminescence and electron microscopy on the same nanowires, we show that catalyst-free nanowires exhibit a low-energy peak with sharp phonon replica, whereas for catalyst-assisted nanowires low-energy emission is linked to the presence of nanostructures with extended morphological defects.

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“…However, understanding the origin of intra band-gap states also requires investigating the dependence of PL emission on power, as was done for NWs in Refs. [17,28,[30][31][32].…”

Section: Introductionmentioning

confidence: 99%

“…For direct band-gap NWs, PL is often measured over large ensembles [15][16][17][18][19][20][21][22]. This, however, can hinder the extrapolation of representative features as structural inhomogeneities may be present.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence of CdSe nanowires grown with and without metal catalyst

et al. 2011

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“…6͑c͒, at room T, the maximum of the emission band ͑dashed line͒ is 14 meV above the fundamental transition. We finally mention that due to the absence of low-energy transitions, the emission band shape of XX clearly differs from the inverse Boltzmann distribution of higher-dimensional nanostructures, 20 which has been eventually applied to the study of NRs.…”

Section: Resultsmentioning

confidence: 99%

Temperature dependence of the spectral band shape of CdSe nanodots and nanorods

2009

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We study theoretically the effect of thermal population on the emission spectrum of single CdSe nanocrystals. Quantum confinement leads to nonsimple emission band shapes, which have different characteristics for excitons, biexcitons, positive, and negative trions. These effects are particularly pronounced in nanorods. The maximum of the emission band is not necessarily centered at the fundamental transition energy.

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“…The BZO nanorods had grown well on the ZnO seed layers and were hexagonal. The strong UV emission from 3.1 to 3.4 eV, which corresponds to near-band-edge emission (NBE), is attributed to various transitions including recombination of free excitons (FX) and its longitudinal optical (LO)-phonon replicas, 15,16 free-to-neutral acceptor (FA) transitions, 17 and donor-acceptor pair (DAP) recombination, 18,19 depending on the local lattice configuration and the presence of defects. 20 In addition, broad deep-level emission (DLE) occurs at 2.251 eV (green emission) in the visible region; DLE is usually attributed to structural defects such as Zn vacancies (V Zn ) 21 and singly ionized oxygen vacancies (V O + ) 22 in the ZnO crystal lattice.…”

Section: Resultsmentioning

confidence: 99%

Temperature-dependent Photoluminescence of Boron-doped ZnO Nanorods

Kim¹,

Park²,

Nam³

et al. 2013

Bulletin of the Korean Chemical Society

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Boron-doped ZnO (BZO) nanorods were grown on quartz substrates using hydrothermal synthesis, and the temperature-dependence of their photoluminescence (PL) was measured in order to investigate the origins of their PL properties. In the UV range, near-band-edge emission (NBE) was observed from 3.1 to 3.4 eV; this was attributed to various transitions including recombination of free excitons and their longitudinal optical (LO) phonon replicas, and donor-acceptor pair (DAP) recombination, depending on the local lattice configuration and the presence of defects. At a temperature of 12 K, the NBE produces seven peaks at 3.386, 3.368, 3.337, 3.296, 3.258, 3.184, and 3.106 eV. These peaks are, respectively, assigned to free excitons (FX), neutral-donor bound excitons (D o X), and the first LO phonon replicas of D o X, DAP, DAP-1LO, DAP-2LO, and DAP-3LO. The peak position of the FX and DAP were also fitted to Varshni's empirical formula for the variation in the band gap energy with temperature. The activation energy of FX was about ~70 meV, while that of DAP was about ~38 meV. We also discuss the low temperature PL near 2.251 eV, related to structural defects.

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Photoluminescence study of ZnO nanorods epitaxially grown on sapphire (112̄0) substrates

Cited by 138 publications

References 29 publications

Photoluminescence of CdSe nanowires grown with and without metal catalyst

Photoluminescence of CdSe nanowires grown with and without metal catalyst

Temperature dependence of the spectral band shape of CdSe nanodots and nanorods

Temperature-dependent Photoluminescence of Boron-doped ZnO Nanorods

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