2018
DOI: 10.1080/24701556.2017.1357580
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Photoluminescence properties of Dy3+ activated Ca2SiO4 nanophosphor for WLED applications

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Cited by 8 publications
(7 citation statements)
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“…A flat-topped VB is speculated below the Fermi level. The experimental band gap in a series of Dy 3+ -activated Ca 2 SiO 4 phosphors was found to be in the range of 5.10–5.44 eV . From the absorption spectrum of the β-Ca 1.999 Ce 0.0005 Na 0.0005 SiO 4 host material, the band gap energy was estimated to be approximately 7.7 eV .…”
Section: Resultsmentioning
confidence: 96%
“…A flat-topped VB is speculated below the Fermi level. The experimental band gap in a series of Dy 3+ -activated Ca 2 SiO 4 phosphors was found to be in the range of 5.10–5.44 eV . From the absorption spectrum of the β-Ca 1.999 Ce 0.0005 Na 0.0005 SiO 4 host material, the band gap energy was estimated to be approximately 7.7 eV .…”
Section: Resultsmentioning
confidence: 96%
“…It is clear that Cs 4 PbBr 6 is a direct band gap material with its intrinsic band gap ranging from 3.2 to 3.9 eV . But due to the existence of Br vacancy, Cs 4 PbBr 6 portrays two band gaps of (i) ∼2.34 eV associated with the defect state sub band gap and (ii) 3.6 eV attributed to its intrinsic band gap (Figure d) calculated as per Cs 4 PbBr 6 by Kubelka Munk theory. ,, The inset of Figure d shows the sub band gap plot arising due to Br vacancies corresponding to the band gap of 2.34 eV. The calculated values for the band gap were slightly less when compared to the theoretical value of 3.95 eV Cs 4 PbBr 6 . ,, The DRS for the 0D microcrystals are given in Figure e.…”
Section: Resultsmentioning
confidence: 97%
“…Embedding the perovskite material on polymer matrices , and coating the top layer with epoxy resins has been carried out during practical applications of p-LEDs to prevent damage to perovskite structure when exposed to water and moisture. The era of flexible electronics unfolds a broad spectrum of applications including wearable electronics, flexible displays, and even submissive energy harvesting devices. , Numerous display technologies have been developed in the field of wearable electronics among which LEDs have taken a major lead as powerful display devices . Research has shown an ardent approach to manufacture scalable electronic devices fabricated directly on flexible substrates.…”
Section: Introductionmentioning
confidence: 99%
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“…Various doped systems in Ca 2 SiO 4 : {Nd 3+ ; Dy 3+ ; (Ce 3+ , Li + ); Tb 3+ ; Sm 3+ ; Eu 2+ ; Eu 3+ ; (P 5+ , Eu 3+ )} are summarized in Table so as to compare them with our system. In the case of inorganic phosphors, the luminescence wavelength changes according to both the luminescent center ion and its coordination environment at the site occupied in the host crystal.…”
Section: Discussionmentioning
confidence: 99%