Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy

Abstract

Photoluminescence (PL) measurements were performed on cubic GaN films grown on GaAs(100) substrates by metalorganic vapor phase epitaxy. The cubic GaN films show a high optical quality that enables us to study the PL spectra in detail. From temperature and excitation intensity dependence, the emission lines at 3.274 and at 3.178 eV were assigned to the excitonic transition and the donor–acceptor pair transition, respectively. We also observed two additional emission lines at 3.088 and 3.056 eV. An excitonic emission at 3.216 eV with full width half maximum value as small as 73 meV was observed at 300 K.

Heteroepitaxy of Doped and Undoped Cubic Group III-Nitrides

“…The dominating near band transitions at 3.26 and 3.15 eV are observed in all cubic GaN epilayers independent of the growth techniques used (MBE [20], MOCVD [21] or HVPE [22]) and also independent of the substrates used (GaAs [16], b-SiC [9], Si [23]). As shown by Daudin et al [24] the ratio of these transitions (I X /I (D o A o ) ) depends strongly on the Ga/N flux ratio and increases for Ga-rich conditions.…”

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN

“…The peak at 3.175 eV quenches rapidly with temperature such that it is unresolvable by 100 K, and power dependent PL measurements show that the peak blueshifts by 20 meV as the excitation power is increased by 3 orders of magnitude. This peak is therefore attributed to donor-acceptor pair (DAP) recombination 31 . The LEB consists of several features which quench with temperature at different rates, resulting in the emergence of other peaks around 160 K. Such a band has been observed previously 17,31,32 , and has been attributed to a mixture of DAP and free-to-bound transitions, and associated phonon replicas.…”

Time-Resolved Photoluminescence of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy

“…The emissions are clearly observed at 3.27 eV and 3.18 eV. From the temperature and excitation intensity dependence, the PL peaks at 3.27 eV and 3.18 eV were assigned to an excitonic transition and a donor±acceptor recombination pair transition (DAP), respectively [3].…”

“…The sample used in this study was cubic GaN grown on a GaAs(001) substrate by low pressure MOVPE using trimethylgallium and 1,1-dimethylhydrazine as the Ga and N sources, respectively [3]. A 20 nm GaN buffer layer was first grown on the substrate at 575 C and the epitaxial growth of a 1 mm GaN was carried out at 900 C. Time-resolved PL measurements were performed at 9 K with the time-correlated single photon counting method.…”