Photoluminescence of V-doped GaN thin films grown by MOVPE technique

Room‐temperature ferromagnetism in V‐doped GaN thin films grown by MOCVD

“…In this spectrum, the V-doping-induced blue-band-luminescence (BL) is prominently observed and low intensity free excitonic luminescence of hexagonal GaN are also seen at 3.41 eV. This BL emission is due to a radiative transition from a shallow donor with a depth of 29 meV to a deep acceptor with a depth of 832 meV [29].…”

The annealing effects of V-doped GaN thin films grown by MOCVD

“…As-grown samples exhibit NBE transition namely the ultraviolet (UV) corresponding to hexagonal GaN located at 3.4 eV and a wide-band peaking at 2.6 eV, which is identified as the blue luminescence (BL) band. The BL band is supposed to be due to a radiative transition from a shallow donor with a depth of 29 meV to a deep acceptor with a depth of 832 meV [14]. The microscopic nature of this deep acceptor might be attributed to V atoms substituting for gallium (V Ga ) or its complexes with nitrogen vacancies (V N ), Si, O and H that are predicted to form in the growth of n type GaN [15].…”

Characterizations of n-type ferromagnetic GaMnN thin film grown on GaN/Al2O3 (0001) by metal-organic chemical vapor deposition

“…In GaMnN case, the strong broad emission band ranging from 2 to 2.5 eV in the yellow spectral region is observed, accompanied by the weak NBE emission peak at 3.37 eV. The broad deep level yellow emission is known to be caused by either N or Ga vacancies, C impurities, O N or Si Ga in GaN film [23][24][25][26][27]. Among those impurities and defects, O N and Si Ga are not responsible for the broad yellow emission because of not utilizing oxygen and silicon in the present film growth procedure.…”