Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells

Abstract

Articles you may be interested inEnhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells J. Appl. Phys. 116, 153504 (2014); 10.1063/1.4898389 Demonstration of lighthole behavior in quaternary GaInAsSb/AlGaAsSb quantum wells using infrared photoluminescence spectroscopy Appl. Phys. Lett. 69, 952 (1996); 10.1063/1.117092 Erratum: Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells [J. Appl. Temperaturedependent exciton behavior in quaternary GaInAsSb/AlGaAsSb strained single quantum wellsWe report the dependence on the excitation power and temperature of the photoluminescence emission from a quaternary Gao,751no,25Asa,Sbo,~~Alo.22Gao.78As,o~s strained multiplequantum-well structure grown by molecular-beam epitaxy. Sharp exciton resonances are observed up to room temperature and have been attributed to localized excitons for temperatures S80-100 K and to free excitons at higher temperatures up to room temperature by a comparative study with temperature-dependent absorption spectroscopy. We conclude that the dominant luminescence quenching mechanism in this quaternary system is mainly due to the trapped excitons thermalizing from the localized regions below 100 K, and the thermal carrier activation from the first electron and heavy-hole subbands to the second electron and heavy-hole subbands at higher temperatures. 0 I995 American Institute of Physics.

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells

“…The observed PL intensity degradation as temperature rises (PL quenching) at low temperatures was then attributed to the delocalization of carriers from the defect states. Similar results were also observed by Shen et al 8 They compared the temperature dependence of the emission and absorption spectra and found a relatively large stokes shift of $8 meV at 4 K and nearly none (<2 meV) at high temperatures. All these results indicate the existence of localized states in the QWs, and they play an important role in the optical property of these QWs.…”

“…The LO phonon energy hx LO was assumed to be 29 meV, which was calculated by linear interpolation using the values of the constituent binary compounds. 8 Only the ionized impurity scattering and the optical scattering terms were considered in the fitting, and the curve fits the experimental result reasonably well. The fitting parameters show C(0) ¼ 5.9 meV, E im ¼ 5.3 meV, C im ¼ 12 meV, and C LO ¼ 18 meV.…”

“…This is quite different from previous reports on similar material systems, where two different activation processes were observed. 8,9 One was the delocalization of the bound excitons from the defect states in the QWs (which has an activation energy around 10 meV), and the other was the over the barrier excitation after the carriers were delocalized. In other words, in those samples the radiative radiation at low temperatures is dominated by the recombination of bounded excitons which are trapped in the QW defect states with a binding energy $10 meV.…”

“…This phenomenon, which is most apparent in cryogenic temperatures, can severely degrade the device performance. [6][7][8][9][10] The optical properties of GaInAsSb/AlInAsSb QWs have been studied by several groups. Rain o et al 9 studied the QWs using temperature dependent PL and obtained an energy level value of 8 meV, which they attributed to the binding energy of excitons bound to the localized defect states.…”

III-V Detectors

“…It is well established that intensity of PL emitted from a quantum-well is quenched with increasing lattice tempera ture. This reduction of PL efficiency (r]pi) with increasing temperature, although well understood in bulk semiconductors [112,169], is still a topic of debate in quantum-wells [244,157,64,214,6,177,222,215,240,5].…”