Superlattices and Microstructures volume 40, issue 4-6, P513-518 2006 DOI: 10.1016/j.spmi.2006.10.001 View full text
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G.M. Prinz, A. Ladenburger, M. Feneberg, M. Schirra, S.B. Thapa, M. Bickermann, B.M. Epelbaum, F. Scholz, K. Thonke, R. Sauer

Abstract: Strained AlN layers grown by MOVPE on sapphire and nominally unstrained AlN single crystals were studied employing photoluminescence, cathodoluminescence, and reflectance spectroscopy in the nearband edge range. The data allow one to determine fundamental optical parameters such as the band edge energy with its crystal field splitting and strain dependence which are still under discussion. Reflection measurements performed on crystal facets with different orientations and subjected to varying selection rules …

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