Photoinduced Field-Effect Passivation from Negative Carrier Accumulation for High-Efficiency Silicon/Organic Heterojunction Solar Cells

Abstract

Carrier recombination and light management of the dopant-free silicon/organic heterojunction solar cells (HSCs) based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) are the critical factors in developing high-efficiency photovoltaic devices. However, the traditional passivation technologies can hardly provide efficient surface passivation on the front surface of Si. In this study, a photoinduced electric field was induced in a bilayer antireflective coating (ARC) of polydimethylsiloxane (PDMS) and titanium oxide (TiO) films, due to formation of an accumulation layer of negative carriers (O species) under UV (sunlight) illumination. This photoinduced field not only suppressed the silicon surface recombination but also enhanced the built-in potential of HSCs with 84 mV increment. In addition, this photoactive ARC also displayed the outstanding light-trapping capability. The front PEDOT:PSS/Si HSC with the saturated O received a champion PCE of 15.51% under AM 1.5 simulated sunlight illumination. It was clearly demonstrated that the photoinduced electric field was a simple, efficient, and low-cost method for the surface passivation and contributed to achieve a high efficiency when applied in the Si/PEDOT:PSS HSCs.

Performance‐Enhancing Approaches for PEDOT:PSS‐Si Hybrid Solar Cells

“…The photoinduced electric field suppressed the silicon surface recombination and increased the built‐in potential by 84 mV. The efficiency of the device was high with a value of 15.51 % under the simulated lighting conditions [79] . Liu et al.…”

“…Thep hotoinduced electric field suppressed the silicon surface recombination and increased the built-in potential by 84 mV.T he efficiency of the device was high with av alue of 15.51 %u nder the simulated lighting conditions. [79] Liu et al achieved aquasi pnj unction on n-Si through the insertion of al ayer of 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN). Thef ormation of the quasi p-n junction strengthened the V bi and F b ,e nhanced the charge separation, and suppressed carrier recombination at the interface between PEDOT:PSS and silicon (Figure 10 c).…”

Strategien zur Steigerung der Leistung von PEDOT:PSS/Si‐Hybrid‐Solarzellen

“…Dieses photoinduzierte elektrische Feld unterdrückte die Rekombination auf der Si‐Oberfläche und verminderte die Diffusionsspannung um 84 mV. Die Einheit zeigte einen hohen Wirkungsgrad von 15.51 % unter simulierten Lichtverhältnissen [79] . Durch den Einbau einer Schicht aus 1,4,5,8,9,11‐Hexaazatriphenylenhexacarbonitril (HAT‐CN) auf dem n‐dotiertem Si schufen Liu et al.…”

“…Generell kçnnen Dipolmoleküle ein elektrisches Feld an der Grenzfläche induzieren und auf diese Weise den V OC -Wert der Solarzelle erhçhen. Liu [79] Durch den Einbau einer Schicht aus 1,4,5,8,9,11-Hexaazatriphenylenhexacarbonitril (HAT-CN) auf dem n-dotiertem Si schufen Liu et al einen Quasi-p-n-Übergang. Die Bildung dieses Quasi-p-n-Übergangs erhçhte V bi und F b , verstärkte die Ladungsträgertrennung und unterdrückte die Ladungsträgerrekombination an der Grenzfläche zwischen PEDOT:PSS und Si (Abbildung 10 c).…”

Photon management effects of hybrid nanostructures/microstructures for organic-silicon heterojunction solar cells

“…So far, great efforts have been devoted to improve the efficiency of the PEDOT:PSS/Si heterojunction solar cells. The current research is mainly focused on the interface engineering and surface modification including surface passivation, [13][14][15][16] field-effect passivation, 17,18 additive treatment of PEDOT:PSS, [19][20][21] and rear interfacial modifications with polymers 22,23 to improve the electrical properties of the solar cells. Although these strategies can effectively boost the power conversion efficiency (PCE) of the PEDOT:PSS/Si heterojunction solar cells, the optical reflection loss is still a crucial factor limiting the device performance.…”