1996
DOI: 10.1103/physrevb.54.16637
|View full text |Cite
|
Sign up to set email alerts
|

Photoinduced conversion of optically active defects in germanium-doped silica

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
13
0

Year Published

1998
1998
2015
2015

Publication Types

Select...
6
1

Relationship

3
4

Authors

Journals

citations
Cited by 28 publications
(13 citation statements)
references
References 26 publications
0
13
0
Order By: Relevance
“…Few works on silica-based optical fibers analyzed the EPR features of EЈ-like Ge centers 8 and their behavior during photoactivated processes. [9][10][11][12][13] Other promising substitutionals, particularly Sn, 14,15 could be embedded in silica but their substitutional role is more questionable. 16,17 To our knowledge, no direct EPR evidence of EЈ-Sn centers has been reported.…”
Section: Introductionmentioning
confidence: 99%
“…Few works on silica-based optical fibers analyzed the EPR features of EЈ-like Ge centers 8 and their behavior during photoactivated processes. [9][10][11][12][13] Other promising substitutionals, particularly Sn, 14,15 could be embedded in silica but their substitutional role is more questionable. 16,17 To our knowledge, no direct EPR evidence of EЈ-Sn centers has been reported.…”
Section: Introductionmentioning
confidence: 99%
“…[5,6,15]. This feature has been attributed by some authors to the coexistence of structurally different defect types and by others that attributes to a single defect affected by the structural environment inhomogeneity arising from the amorphous matrix [9,14,16].…”
Section: Contribution To the Discussion About B Band Attributionmentioning
confidence: 92%
“…The UV-induced bleaching of this band leads to the formation of new absorption bands at %4.6 eV, %5.8 eV and %6.2 eV and may also give rise to luminescence [2][3][4][5][6][7]. In particular, fiber irradiated with UV light at 5 eV displays an emission of broadband blue fluorescence around 285 nm (4.4 eV) and 400 nm (3.1 eV), referred to as a and b bands, respectively [2].…”
Section: Introductionmentioning
confidence: 97%
See 1 more Smart Citation
“…31 In Ge-containing silica-based glass, light emission in the violet spectral region is mainly expected from oxygen deficient defects consisting in twofold coordinated O-Ge-O sites. [31][32][33] However, in such defects, the emission is ascribed to triplet-to-singlet transitions with a decay time of 0.1 ms, 32 incompatible with the observed fast decay in the ns domain. Instead, violet luminescence with few ns of lifetime is typical of alkali-germanates and alkali-silicates, 34,35 arising from non-bridging groups 3ORT-O-M with T = Si, Ge and M = Li, Na.…”
mentioning
confidence: 98%