All-inorganic perovskite materials have gained enormous
attention
in photodetectors (PDs) due to their high charge carrier mobility,
cost-effectiveness, and tunable bandgap. However, instability and
corresponding performance degradation of perovskite PDs when exposed
to surrounding humidity persist as challenges. In this work, a composite
PD was fabricated by combining CsPb2Br5 nanowires
and CsPbBr3 thin-film perovskites as an example to address
these problems. The CsPb2Br5 nanowires were
prepared by a facile water-bath method to improve the water resistance,
and the subsequent evaporation of the CsPbBr3 film formed
a type-I heterostructure to enhance its photosensitivity of PDs. As
a result, the device exhibits a 10 times higher responsivity of 206
mA/W than that of the bare CsPbBr3 thin film device and
maintains 92.85% of its original detectivity after being exposed to
a humid environment (RH = 75%) for 144 h. Furthermore, the corresponding
fundamental characterization was also performed to reveal the role
of CsPb2Br5 nanowires in enhancing the overall
performance of the PD. This work provides a simple and efficient approach
to enhancing the durability and performance of all-inorganic halide
perovskite devices through the embedding of CsPb2Br5 perovskite nanowires.