Photoelectric Computer Simulation of Cu₂O/WO₃ Composite Semiconductor Materials

Abstract

Cuprous oxide (Cu2O) is a P-type semiconductor material with a narrow forbidden band and shows good optoelectronic performance. Due to the easy composition of photo-induced electrons and holes in Cu2O, the photocatalytic activity is reduced, so it is necessary to reduce the composition of photo-induced electrons and holes in Cu2O to improve its optoelectronic performance. In this work, nano-Cu2O and Cu2O/tungsten trioxide (WO3) composite semiconductor films were first prepared by anodization. Nano-Cu2O/WO3 composite semiconductors can be obtained in both alkaline solution and acidic solution. Among them, the granular Cu2O/WO3 composite film can be obtained by annealing treatment at 370 °C after anodization at 10 V voltage in the alkaline solution, and its photocurrent density is 50 times that of pure Cu2O film. The flaky Cu2O/WO3 composite film can be obtained by annealing treatment at 400 °C after anodization at 0.8 V voltage in the acid solution, and its photocurrent density is 17 times that of pure Cu2O film. The Cu2O/WO3 composite film prepared in the acid solution is taken to peel off the single-layer film by the micromechanical exfoliation method, and to construct the semiconductor optoelectronic device based on single-layer Cu2O/WO3 by photolithography micromachining technology. The nano-film device is irradiated with different wavelengths of laser light, and it is found that Cu2O/WO3 shows excellent photosensitivity. In addition, the current changes greatly under blue-violet light irradiation and changes slightly under red light irradiation. The field effect transistor based on single-layer Cu2O/WO3 is constructed, and its field effect transport performance is affected by the adsorption of water molecules. The results reveal that with the increase of relative humidity, the conductivity and switching voltage of the optoelectronic device increase accordingly.