2018
DOI: 10.1002/adfm.201870219
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Photodetectors: Ultrasensitive Room‐Temperature Terahertz Direct Detection Based on a Bismuth Selenide Topological Insulator (Adv. Funct. Mater. 31/2018)

Abstract: In article number https://doi.org/10.1002/adfm.201801786, Lin Wang, Xiaoshuang Chen, and their co‐workers propose a metal‐topological insulator–metal subwavelength structure for ultrasensitivity, room temperature terahertz photodetection. The integration of a topological insulator and micro structures exploits the unique properties of topological surface states and opens up a new route for fast imaging applications, promising a superb impact on THz optoelectronics.

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Cited by 30 publications

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“…The specific conductivity values were obtained according to the equation of I ¼ sAd À 1 V, where A is the active area of devices and d is the thickness of the CILs. [19] As shown in Figure 1d, SePDI3 presents a higher conductivity (1.59×10 À 5 s cm À 1 ) than PDI3 (1.25×10 À 5 s cm À 1 ), consistent with the EPR results. Ultimately, SePDI3 exhibits superior charge transport capacity, resulting in high J sc .…”
Section: Results
supporting
confidence: 86%
“…Therefore, the conductivities of both CIMs are evaluated employing a device model: ITO/CILs/Ag. The specific conductivity values were obtained according to the equation of I=σAd-1V ${I=\sigma A{d}^{-1}V}$ , where A is the active area of devices and d is the thickness of the CILs [19] . As shown in Figure 1d, SePDI3 presents a higher conductivity (1.59×10 −5 s cm −1 ) than PDI3 (1.25×10 −5 s cm −1 ), consistent with the EPR results.…”
Section: Results
supporting
confidence: 78%
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How this paper cites the one you are viewing
“…The specific conductivity values were obtained according to the equation of I ¼ sAd À 1 V, where A is the active area of devices and d is the thickness of the CILs. [19] As shown in Figure 1d, SePDI3 presents a higher conductivity (1.59×10 À 5 s cm À 1 ) than PDI3 (1.25×10 À 5 s cm À 1 ), consistent with the EPR results. Ultimately, SePDI3 exhibits superior charge transport capacity, resulting in high J sc .…”
Section: Results
supporting
confidence: 86%
“…Therefore, the conductivities of both CIMs are evaluated employing a device model: ITO/CILs/Ag. The specific conductivity values were obtained according to the equation of I=σAd-1V ${I=\sigma A{d}^{-1}V}$ , where A is the active area of devices and d is the thickness of the CILs [19] . As shown in Figure 1d, SePDI3 presents a higher conductivity (1.59×10 −5 s cm −1 ) than PDI3 (1.25×10 −5 s cm −1 ), consistent with the EPR results.…”
Section: Results
supporting
confidence: 78%
How this paper cites the one you are viewing
“…Notably, the J sc and FF of the QQ1 : PY-IT are significantly higher than those of the PM6 : PY-IT-based devices. [29] The V oc is significantly higher than those of nonhalogenated polymer donors reported in all-PSCs, which typically obtained V oc below 0.9 V (Table S3). The results highlighted the remarkable ability of DTQI electron-withdrawing building block to achieve deep HOMO level, thus higher V oc and PCE.…”
Section: Results
mentioning
confidence: 79%
“…To gain further insights into the superior photovoltaic performance of QQ1 : PY‐IT, a comparative study was carried out with halogenated polymer donor PM6. Notably, the J sc and FF of the QQ1 : PY‐IT are significantly higher than those of the PM6 : PY‐IT‐based devices [29] . The V oc is significantly higher than those of nonhalogenated polymer donors reported in all‐PSCs, which typically obtained V oc below 0.9 V (Table S3).…”
Section: Results
mentioning
confidence: 89%
How this paper cites the one you are viewing
“…In TPC measurements, the attenuation of transient photocurrent can reflect the quenching speed of photoelectrons in different perovskite films. 60 As shown in Fig. 4g, the charge decay time of the reference and camphorbased f-PSCs was 276.5 and 216.3 ns, respectively, indicating that the camphor-based perovskite films modified by camphor had less electron-hole recombination and longer distance for charge transport.…”
Section: Photovoltaic Performance Of F-pscs
mentioning
confidence: 82%