Photodetectors: Design Principles and Material Engineering of ZnS for Optoelectronic Devices and Catalysis (Adv. Funct. Mater. 36/2018)

Abstract

The unique optoelectronic properties of ZnS make for an excellent transparent semiconductor that turns ultraviolet radiation into electrical signals. In article number https://doi.org/10.1002/adfm.201802029, Xiaosheng Fang and co‐workers comprehensively summarize the recent breakthroughs in research on ZnS and propose design principles and engineering techniques for tailoring ZnS toward improved/novel optoelectronic properties, which enable applications including transparent conductors, UV photodetectors, luminescent devices, and catalysts.

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“…This stabilization underscores the critical role of ion dipole‐enforced interactions in establishing a dynamic yet structurally robust network. Deconvolution of the C═O stretching region (1600–1800 cm⁻¹) [ 39 ] quantitatively confirms the enhanced hydrogen‐bonding network [ 40,41 ] (Figure 4g,h). The hydrogen‐bonding fraction increases substantially from 62.10% in the pure polymer P(AA‐co‐HFA) to 88.40% in the A 4 H 1 ‐50 gel, indicating densification of the molecular network.…”

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“…As shown in the FTIR spectra in Figure 1b, the C═O absorption band in the UGTS ionogel shifted to lower wavenumbers compared to that in poly(BCEA‐ co ‐PEGMA), indicating the formation of hydrogen bonds between [EMIM] + ions and C═O groups. [ 18,27 ] However, the proportion of hydrogen‐bonded C═O groups in the UGTS ionogel was maintained at 51.5%, which was slightly lower than that in poly(BCEA‐ co ‐PEGMA) (58.8%, Table S1, Supporting Information). These findings suggest that the multiple hydrogen bonds between BCEA repeating units effectively resisted the disruption of [EMIM][BF 4 ], ensuring the maintenance of a phase‐separated structure in the UGTS ionogel even under an extremely high electrolyte loading.…”