Photoconductivity of single-wall carbon nanotubes under continuous-wave near-infrared illumination

Abstract

The photoconductivity of films of single-wall carbon nanotubes has been studied under continuous-wave near-infrared illumination. The photocurrent exhibits a linear response with the light intensity and with bias voltage up to 5 V. The temporal photoresponse of on/off step illumination shows a relatively slow relaxation time (4.3 s for films with a thickness of ∼500 nm), which can be interpreted in terms of a kinetic model that takes into account the binding of photoelectrons with adsorbed oxygen. Possible applications of this photosensitive material are discussed.

Uncooled Carbon Nanotube Photodetectors

“…Nonetheless, the portion of photoconductivity contributed by the electron-hole pairs separation is usually much smaller compared to oxygen desorption [56] and bolometric effects. [54] One posssible way to enhance the separation of electron-hole pairs is to incorporate CNTs into certain types of polymers.…”

Impurity mediated absorption continuum in single-walled carbon nanotubes

“…[9][10][11] There have been considerable interest in using SWNTs to make photodetectors and photovoltaic devices. [12][13][14][15][16][17] The optical properties of SWNTs are expected to be highly sensitive to defects and impurities, 13,14 which will play an important role in their use of optoelectronic devices. So far, however, theoretical calculations, especially those based on first-principles method, [18][19][20][21] have been limited to perfect SWNTs.…”

Cup‐Stacked Carbon Nanotube Schottky Diodes for Photovoltaics and Photodetectors

“…[2][3][4] Based on this fundamental understanding, various kinds of CNTFETs (n-type, [ 5,6 ] p-type, [ 7,8 ] ambipolar [ 9 ] have been built by carefully monitoring the electrode work function. Moreover, semiconducting singlewalled CNTs (SWCNTs) are direct band gap materials and studies about photoluminescence, [10][11][12] electroluminescence [13][14][15] and photoconductivity [16][17][18] have been widely reported. In particular, the study of ambipolar CNTFET has played a key role in the further development of electro-optical devices.…”