2009
DOI: 10.1063/1.3238269
|View full text |Cite
|
Sign up to set email alerts
|

Photocarrier recombination dynamics in highly excited SrTiO3 studied by transient absorption and photoluminescence spectroscopy

Abstract: We studied photocarrier recombination processes in highly excited SrTiO 3 crystals using pump-probe transient absorption ͑TA͒ and photoluminescence ͑PL͒ spectroscopy at room temperature. TA signals of nondoped SrTiO 3 crystals clearly appear in the visible and infrared spectral region under intense interband photoexcitation, and TA spectra show Drude-like photon-energy dependence. Both TA and PL decay curves are well explained by the same simple rate equation including three-body Auger recombination and single… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

9
52
0

Year Published

2010
2010
2022
2022

Publication Types

Select...
10

Relationship

5
5

Authors

Journals

citations
Cited by 49 publications
(61 citation statements)
references
References 19 publications
9
52
0
Order By: Relevance
“…[34][35][36][37][38] Our experimental setup to conduct highly sensitive transient absorption measurements executed by the pump-probe technique is displayed in Figure 3 A similar result was observed for other doped semiconductor materials. 6,16,[24][25][26]40 In these cases, the slow component is also attributed to the carrier trapping in the deeplevel energy states, which can attract electrons from the conduction band or holes from the valence band. Essentially, the time constants of both the fast and the slow component progressively decrease with increasing doping concentration.…”
Section: Resultsmentioning
confidence: 99%
“…[34][35][36][37][38] Our experimental setup to conduct highly sensitive transient absorption measurements executed by the pump-probe technique is displayed in Figure 3 A similar result was observed for other doped semiconductor materials. 6,16,[24][25][26]40 In these cases, the slow component is also attributed to the carrier trapping in the deeplevel energy states, which can attract electrons from the conduction band or holes from the valence band. Essentially, the time constants of both the fast and the slow component progressively decrease with increasing doping concentration.…”
Section: Resultsmentioning
confidence: 99%
“…[22][23][24][25][26] Strongly photoexcited or electron-doped SrTiO 3 shows a broad blue PL band at room temperature because of the radiative recombination of electrons and holes. The PL dynamics of SrTiO 3 can be explained on the basis of a simple model that includes nonradiative Auger recombination involving three carriers such as electron-electonhole.…”
mentioning
confidence: 99%
“…It is known that electron-doped or photoexcited SrTiO 3 exhibits a broad optical absorption band in the infrared region [26][27][28]. The TA signal is observed under excitation at an energy above the band gap.…”
mentioning
confidence: 99%