MRS Proc. 2000 DOI: 10.1557/proc-610-b6.6 View full text
P. H. Keys, R. Brindos, V. Krishnamoorthy, M. Puga-Lambers, K. S. Jones, M. E. Law

Abstract: AbstractThe release of interstitials from extended defects after ion implantation acts as a driving force behind transient enhanced diffusion (TED). Implantation of Si+ ions into regions of phosphorus-doped silicon provides experimental insight into the interaction of silicon interstitials and dopant atoms during primary damage annealing. The presence of phosphorus influences the morphology of secondary defects during initial nucleation. Transmission electron microscopy (TEM) is used to differentiate between d…

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