Phonon dispersions of silicon and germanium from first-principles calculations

Wei, Sheng; Chou, M. Y.

doi:10.1103/physrevb.50.2221

Cited by 99 publications

(72 citation statements)

References 23 publications

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“…Raman peak for bulk germanium is at B = 300.7 cm −1 [18]. Similarly, we find B = 31.6cm −1 for silicon [17]. Frequency shifts for silicon particles of different sizes are presented in Ref.…”

Section: Mainmentioning

confidence: 80%

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New explanation of Raman peak redshift in nanoparticles

Meilakhs

Koniakhin

2017

Superlattices and Microstructures

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In this letter, we propose a new model that explains the Raman peak downshift observed in nanoparticles with respect to bulk materials. The proposed model takes into account discreteness of the vibrational spectra of nanoparticles. For crystals with a cubic lattice (Diamond, Silicon, Germanium) we give a relation between the displacement of Raman peak position and the size of nanoparticles. The proposed model does not include any uncertain parameters, unlike the conventionally used phonon confinement model (PCM), and can be employed for unambiguous nanoparticles size estimation. MainIn nanoparticles the crystalline Raman peak position is downshifted and asymmetrically broadened with respect to bulk materials. Previously the * kon@mail.ioffe.ru 1 arXiv:1602.00114v1 [cond-mat.mes-hall]

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Section: Mainmentioning

confidence: 80%

“…In a paper [5] frequency shifts are measured for germanium nanoparticles with diameters 2.6, 3, 9.6 and 13 nm, and Raman peaks are indicated at 295.9, 296.7, 299.4, 299.5 cm −1 , respectively. By approximating phonon dispersion presented in [17], we find B = 18.6 cm −1 for germanium. Raman peak for bulk germanium is at B = 300.7 cm −1 [18].…”

Section: Mainmentioning

confidence: 99%

New explanation of Raman peak redshift in nanoparticles

Meilakhs

Koniakhin

2017

Superlattices and Microstructures

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“…where A(T) and B(T) are determined from the phonon dispersión curve [7]. The Raman phonon bands depend on the temperature because of the thermal expansión and the anharmonicity of the vibrational potential energy [5,8].…”

Section: Resultsmentioning

confidence: 99%

Si and Si_xGe_1‐x NWs studied by Raman spectroscopy

Anaya¹,

Prieto²,

Martínez³

et al. 2011

Phys. Status Solidi (c)

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Group IV nanostructures have attracted a great deal of attention because of their potential applications in optoelectronics and nanodevices. Raman spectroscopy has been extensively used to characterize nanostructures since it provides non destructive information about their size, by the adequate modeling of the phonon confinement effect. The Raman spectrum is also sensitive to other factors, as stress and temperature, which can mix with the size effects borrowing the interpretation of the Raman spectrum. We present herein an analysis of the Raman spectra obtained for Si and SiGe nanowires; the influence of the excitation conditions and the heat dissipation media are discussed in order to optimize the experimental conditions for reliable spectra acquisition and interpretation.

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“…Second, BLS is more sensitive to refractive index changes because the acoustic phonons follow a positive, linear dispersion curve and the optical phonons follow a relatively flat dispersion curve in the low wave vector range probed by light scattering techniques. 38 The increase in the refractive index changes the wave vector in silicon, causing an increase in the measured frequency of the acoustic phonons and little change in the measured optical phonon frequency. Third, because of the low frequency range probed by the BLS measurements, one cannot rely on the anti-Stokes and Stokes ratio as a method for temperature calibration.…”

mentioning

confidence: 99%

“…1(c), we observed one phonon peak corresponding to the degenerate optical modes near the Brillouin zone center. 38 Next, the sample was uniformly heated, in 30 K increments, from 298 K to 568 K, and probed with an incident laser power of 150 mW. The temperature was measured by a thermocouple attached to the heater close to the sample.…”

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confidence: 99%

Temperature dependence of Brillouin light scattering spectra of acoustic phonons in silicon

Olsson

Klimovich

et al. 2015

Applied Physics Letters

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Electrons, optical phonons, and acoustic phonons are often driven out of local equilibrium in electronic devices or during laser-material interaction processes. The need for a better understanding of such non-equilibrium transport processes has motivated the development of Raman spectroscopy as a local temperature sensor of optical phonons and intermediate frequency acoustic phonons, whereas Brillouin light scattering (BLS) has recently been explored as a temperature sensor of low-frequency acoustic phonons. Here, we report the measured BLS spectra of silicon at different temperatures. The origins of the observed temperature dependence of the BLS peak position, linewidth, and intensity are examined in order to evaluate their potential use as temperature sensors for acoustic phonons.

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Phonon dispersions of silicon and germanium from first-principles calculations

Cited by 99 publications

References 23 publications

New explanation of Raman peak redshift in nanoparticles

New explanation of Raman peak redshift in nanoparticles

Si and Si_xGe_1‐x NWs studied by Raman spectroscopy

Temperature dependence of Brillouin light scattering spectra of acoustic phonons in silicon

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Phonon dispersions of silicon and germanium from first-principles calculations

Cited by 99 publications

References 23 publications

New explanation of Raman peak redshift in nanoparticles

New explanation of Raman peak redshift in nanoparticles

Si and SixGe1‐x NWs studied by Raman spectroscopy

Temperature dependence of Brillouin light scattering spectra of acoustic phonons in silicon

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Product

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Si and Si_xGe_1‐x NWs studied by Raman spectroscopy