2021
DOI: 10.1103/physrevlett.126.036802
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Phase Signature of Topological Transition in Josephson Junctions

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Cited by 102 publications
(86 citation statements)
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“…Ke et al observed an expected minimum of critical current at a gate-voltage dependent value of B [12]. Dartiailh et al reported a similar signature and additionally detected a π phase shift of the current-phase relation associated with revival of the supercurrent [10].…”
mentioning
confidence: 87%
See 1 more Smart Citation
“…Ke et al observed an expected minimum of critical current at a gate-voltage dependent value of B [12]. Dartiailh et al reported a similar signature and additionally detected a π phase shift of the current-phase relation associated with revival of the supercurrent [10].…”
mentioning
confidence: 87%
“…Theoretically, the N region under these conditions acts as a quasi-one-dimensional topological wire bounded by trivial superconducting walls, with Majorana zero modes at its ends [1][2][3]. Compared to alternative nanowire platforms [4][5][6][7][8], planar JJs have a new experimental knob, the phase difference between bounding trivial superconductors, which can lower the magnetic field required to observe a topological phase transition, as reported in recent experiments in Al/InAs [9,10], Al/HgTe [11] and NbTiN/InSb [12].…”
mentioning
confidence: 94%
“…Previous investigations 37,39,42 have shown the im- portance of properly tuning the chemical potential, magnetic field strength, and superconducting phase difference for driving the JJ into the TS state. However, the strong dependence of the TS state and the ground-state phase on the spin-orbit angle (θ so ), the magnetic field orientation (ϕ B ), and the supercurrent direction (θ c ), shown in Fig.…”
Section: B Effects Of Crystalline Anisotropymentioning
confidence: 99%
“…The interrelation between the Zeeman interaction and the Rashba SOC emerging from the lack of structure inversion symmetry 62 The x and ŷ axes define the coordinate system in the junction reference frame. The Rashba SOC strength can be controlled by using a gate on the top of the normal region 42,65 . (b) ϕB and θc characterize the orientation of the in-plane magnetic field (B) and the junction reference frame, respectively, with respect to the semiconductor [100] crystallographic axis.…”
Section: Introductionmentioning
confidence: 99%
“…The anomalous phase shift could cause spin-galvanic effect, also known as inverse Edelstein effect [10,11]. Such a magneto-electric effect might be useful in future superconducting electronics and spintronics [12], such as to drive quantum phase batteries [13], to form superconducting quantum memories [14,15], or to induce topological superconductivity [16][17][18][19], etc.…”
mentioning
confidence: 99%