Phase defect detection signal analysis: dependence of defect size variation

Amano, Tsuyoshi; Watanabe, Hidehiro; Abe, Tsukasa

doi:10.1117/1.jmm.14.1.013502

Cited by 7 publications

(2 citation statements)

References 29 publications

(25 reference statements)

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“…We optimized the AFM measurement conditions to achieve high repeatability. 20,21) Figure 2 shows the observation results of defect (a). Figure 2(a) shows the AFM results, whereas Figs.…”

mentioning

confidence: 99%

Actual defect observation results of an extreme-ultraviolet blank mask by coherent diffraction imaging

Harada

Hashimoto

Amano³

et al. 2016

Appl. Phys. Express

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Extreme-ultraviolet (EUV) lithography poses a number of challenges, one of which is the production of a defect-free mask. To observe the defects on an EUV mask in a quantitative phase image, we have developed a microcoherent EUV scatterometry microscope. The intensity and phase images of the defects are reconstructed using ptychography. We observe four actual defects on an EUV blank mask using the microscope. The reconstructed shapes of the actual defects correspond well to those measured by atomic force microscopy (AFM). Our microscope should therefore function as an essential review tool in characterizing defects.

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“…We optimized the AFM measurement conditions to achieve high repeatability. 20,21) Figure 2 shows the observation results of defect (a). Figure 2(a) shows the AFM results, whereas Figs.…”

mentioning

confidence: 99%

Actual defect observation results of an extreme-ultraviolet blank mask by coherent diffraction imaging

Harada

Hashimoto

Amano³

et al. 2016

Appl. Phys. Express

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“…Additionally, an at-wavelength defect inspection tool has been found to be helpful. [23][24][25] The at-wavelength defect inspection tool has considerable advantages over other defect inspection tools using deep ultraviolet light optics. Employing the EUV light has the main advantage of excellent capability of detecting phase defects, but also predicts the lithographic impact of the detected phase defect on a wafer better.…”

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confidence: 99%

Measurement of the phase defect size using a scanning probe microscope and at-wavelength inspection tool

Amano¹,

Abe

2015

J. Micro/Nanolith. MEMS MOEMS

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Abstract. Predicting the lithography impact of a phase defect embedded in a mask used for extreme ultraviolet lithography on the printed image on wafer is a challenging task. In this study, two types of measurement tools were employed to characterize the phase defects. The prior measurement tool was a scanning probe microscope used for measuring the surface topography of phase defects, and the second was an at-wavelength darkfield inspection tool capable of capturing a phase defect and then calculating the defect detection signal intensity (DSI) from those images. A programmed phase defect mask with various lateral sizes and depths was prepared. The sizes and DSIs were then measured. The measured data indicated that the DSIs did not directly correlate with the phase defect volumes. The influence of the phase defects on the printed image on a wafer was also calculated using a lithography simulator. The simulation results indicated that the printed critical dimensions (CDs) were strongly correlated with the DSIs rather than with the phase defect volumes. As a result, the influence of the phase defect on the printed CD can be predicted from the values of the DSIs. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Variation in phase defect size on extreme ultraviolet mask before and after reflective multilayer coating

Amano¹,

Abe

2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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It is very difficult to predict how multilayer defects known as “phase defects” impact on wafer printed image when embedded in an extreme ultraviolet (EUV) mask. Therefore, researchers have reported many techniques to analyze and characterize phase defects using scanning probe microscopes (SPMs) and phase defect inspection tools that employ deep ultraviolet or EUV optics. To characterize the phase defects using SPM or other inspection tools, preparing and employing a programmed phase defect mask is a practical way to address the task because the locations, sizes, and quantity of phase defects can be defined to fit experiments. For this study, a programmed phase defect mask was prepared to investigate the size uniformity of the programmed phase defects. The designed phase defects were holes 40-, 50-, 70-, or 80-nm-wide and 4.5-nm-deep. Using a SPM, the phase defects were measured for their depths and widths before and after coating with the multilayer. As a result, variations in the measured depths and widths were much smaller than the defect-to-defect variations, reflecting measurement repeatability. In addition, the variations in the depths and widths of the phase defects after multilayer coating were larger than before coating. It was also found that a given group of phase defects exhibited significant variations in depth and width after multilayer coating, even if they were the same prior to coating. This result indicated that it is difficult to estimate precoating phase defect sizes based on measurements after the multilayer is coated.

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Phase defect detection signal analysis: dependence of defect size variation

Cited by 7 publications

References 29 publications

Actual defect observation results of an extreme-ultraviolet blank mask by coherent diffraction imaging

Actual defect observation results of an extreme-ultraviolet blank mask by coherent diffraction imaging

Measurement of the phase defect size using a scanning probe microscope and at-wavelength inspection tool

Variation in phase defect size on extreme ultraviolet mask before and after reflective multilayer coating

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