We present measurements of the phase coherence time t f in six quasi-1D Au wires and clearly show that t f is temperature independent at low temperatures. We suggest that zero-point fluctuations of the phase coherent electrons are responsible for the observed saturation of t f . We introduce a new functional form for the temperature dependence and present the results of a calculation for the saturation value of t f . This explains the observed temperature dependence of our samples as well as many 1D and 2D systems reported to date. [S0031-9007(97)03022-6] PACS numbers: 03.65.Bz, 72.70.+ m, 73.20.Fz Perhaps the most fundamental property of a particle in any quantum system is the time over which the phase coherence is maintained in its wave function. It is well understood that coupling the quantum system to an environment [1] can cause a reduction in the constructive interferences of all possible Feynman paths due to changes induced in the environment by the particle and/ or by phase randomization in the particle's wave function caused by the environment. In condensed matter electron systems, the components of the environment which can cause decoherence are the electron-phonon (EP), the electron-electron (EE), and magnetic impurity interactions [2]. In addition, under certain conditions dephasing can occur in the absence of any inelastic process [3]. Elastic scatterings from nonmagnetic impurities are known not to cause phase randomization [4]. The standard approach for determining the phase coherence time t f in diffusive 1D and 2D systems is to fit weak localization theory to the measured change in resistance as a function of magnetic field near zero field [2,5]. Theoretically, this measured t f ͑T ͒ should increase with decreasing temperature becoming infinite in very large systems at T 0 because both the EP and EE interactions produce a t f ϳ 1͞T p where p varies between 0.5 and 3 [2, 3,5,6]. Yet in every published experiment performed down to very low temperatures, the phase coherence time is universally found to approach a temperature independent and finite value [7][8][9][10]. The temperature at which this saturation occurs varies by orders of magnitude ranging from 10 K in some GaAs devices to as low as 20 mK in a 2D Au film.There have been many different theoretical approaches aimed at understanding the temperature dependence of t f [2,3,6]. At temperatures below which the phonons are important, Altshuler et al. [6] have shown that the EE process with large energy transfer should dominate with t f t ee~LT , where L T ph D͞k B T , and D is the classical diffusion coefficient in d dimensions. Subsequently, it was suggested that at low temperatures an EE process with small energy transfer will dominate the temperature dependence of the scattering rate with t f t N~1 ͞T 2͞3 [6]. This latter form has been verified by several papers where the Aharonov-Bohm phase of the electron wave function is used to compute the mean square value of t f , which is then related to the resistance of the phase coherent volu...