Phase coexistence region and dielectric properties of PZT ceramics

Soares, M.R.; Senos, A.M.R.; Mantas, P.Q.

doi:10.1016/s0955-2219(99)00170-3

Cited by 100 publications

(51 citation statements)

References 19 publications

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“…Notice that lattice parameters of present epitaxial PNZT films exhibit a different compositional dependence from the lattice parameters of bulk PZT ceramics. The tetragonality (c/a) of epitaxial PNZT films with different compositions has been calculated and compared to that for the bulk PZT ceramics [18][19][20], as shown in Fig. 4b.…”

Section: Phase Structure Characterizationmentioning

confidence: 99%

“…4b. Soare et al [20] reported that, in all the compositional range of bulk PZT ceramics where the tetragonal phase is present, c/a ratio is decreasing down to c/a = 1 with decreasing Ti content particularly inside the coexistence region (MPB), meaning that the phase structure is approaching the cubic geometry. Correspondingly, the c/a ratio of present epitaxial PNZT films decreases almost linearly from 1.040 to 1.005 when the Zr/Ti ratio changes from 20/80 to 70/30 and reaches nearly unity at a Zr/Ti ratio of 80/20.…”

Section: Phase Structure Characterizationmentioning

confidence: 99%

“…For the Zr/(Zr + Ti) ratio at 0.20, two sets of lattice parameters are plotted according to the a-and c-domain structures, respectively and (b) composition dependence of ''c/a" ratio both in epitaxial PNZT thin films and bulk PZT samples. (h indicates bulk PZT data (see Refs [18][19][20]…”

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confidence: 99%

See 2 more Smart Citations

Shifting of the morphotropic phase boundary and superior piezoelectric response in Nb-doped Pb(Zr, Ti)O3 epitaxial thin films

Zhu

Liu

et al. 2009

Acta Materialia

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Section: Phase Structure Characterizationmentioning

confidence: 99%

Section: Phase Structure Characterizationmentioning

confidence: 99%

See 1 more Smart Citation

Shifting of the morphotropic phase boundary and superior piezoelectric response in Nb-doped Pb(Zr, Ti)O3 epitaxial thin films

Zhu

Liu

et al. 2009

Acta Materialia

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“…Ferroelectric materials with diffuse phase transition provide the basic requirements to obtain ceramic materials with high dielectric permittivity and low temperature coefficients, necessary for multilayer ceramic capacitor applications [5]. The Ba-modified Pb(Zr 1-x Ti x )O 3 (PBZT) ceramic composition remains for many years an interesting ferroelectric material, as a result of interesting physical properties (very high value of electrical permittivity weakly depending on temperature) [6][7][8][9][10]. The PBZT ceramic materials with ferroelectric relaxor properties have been reported as a good candidate for microelectronic applications [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Electrophysical properties of the multicomponent PBZT-type ceramics doped by Sn4+

et al. 2018

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In the work, the multicomponent Pb 0.75 Ba 0.25 (Zr 0.65 Ti 0.35 ) 1-a Sn a O 3 (PBZT/Sn) ceramics were obtained with various tin amounts (a from the range of 0.0 to 0.1). The densification of the PBZT/Sn ceramic samples was performed using pressureless sintering method. The effect of SnO 2 content on the crystal structure of PBZT/Sn ceramics, microstructure, DC electrical conductivity and electrophysical properties (including dielectric and ferroelectric testes), were investigated. The PBZT/Sn ceramic samples exhibit high values of dielectric permittivity at the temperature of ferro-paraelectric phase transition and show the relaxor character of phase transition. Excessive SnO 2 contents doping of the PBZT/Sn materials (already for a = 0.1) might lead to lattice stress and structure defects, which successively leads to the deterioration of ferroelectric and dielectric properties of the ceramic samples. The presented research shows that the addition of SnO 2 to the base PBZT compound (in the proper proportion) gives an additional possibility of influencing the parameters essential for practical applications, from the areas of micromechatronics and microelectronics.

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“…The possibility of their functional use depends on the stability of the piezoelectric parameters in both time, temperature and under the influence of various external factors. One group of materials that meet the newer and more functional requirements for applications are multicomponent solid solutions obtained on the basis (1-x)PbZrO 3 −(x)PbTiO 3 [5]. Multicomponent ceramic materials based on PZT-type can be designed with the entire area of the phase diagram for specific applications, e.g.…”

Section: Introductionmentioning

confidence: 99%

The Multicomponent PZT-type Ceramics for Micromechatronic Applications

Bochenek¹,

Niemiec²,

Adamczyk³

et al. 2017

Archives of Metallurgy and Materials

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In the paper two compositions of the multi-component PZT-type ceramics admixtures by Mn , Ni 2+ were presented. The ceramic powders were synthesized by the calcination of powders while their densification was carried out by free sintering method. The dielectric, ferroelectric, piezoelectric studies and DC electrical conductivity of the multicomponent PZT-type samples were presented. The results of the multi-component ceramics predispose these type materials in micromechatronic and microelectronic applications for example as element of the actuators.

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Phase coexistence region and dielectric properties of PZT ceramics

Cited by 100 publications

References 19 publications

Shifting of the morphotropic phase boundary and superior piezoelectric response in Nb-doped Pb(Zr, Ti)O3 epitaxial thin films

Shifting of the morphotropic phase boundary and superior piezoelectric response in Nb-doped Pb(Zr, Ti)O3 epitaxial thin films

Electrophysical properties of the multicomponent PBZT-type ceramics doped by Sn4+

The Multicomponent PZT-type Ceramics for Micromechatronic Applications

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