Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node and beyond

Structural and electrical analysis of In–Sb–Te‐based PCM cells

“…These values correspond to a threshold electric field of 35 MV/m and 22 MV/m, respectively, across the 45 nm thick In -Sb-Te active area. Such electric field is higher than that required for Ge -Sb -Te-based counterparts, which feature a similar threshold voltage (ranging from ≈1 V to 1.6 V [11,12], across a 90 nm thick active area). Other studies on PCM cells based on In 7 Sb 33 Te 60 reported a threshold voltage of ≈1.7 V [13].…”

Nanoscale mechanically induced structural and electrical changes in Ge2Sb2Te5 films

“…Nanoscale mechanically induced structural and electrical changes in Ge 2 We demonstrate that the microstructure and electrical properties of Ge 2 Sb 2 Te 5 films can be changed by a nanoscale mechanical process. Nanoscratching is used to define modified areas onto an as-deposited crystalline Ge 2 Sb 2 Te 5 film.…”

“…1 In the emerging technology of phase change random access memories (PCRAM), data are written and read by high and low current impulses, respectively. 2 Both optical and PCRAM devices are based on the reversible phase change process occurring in the active film and the consequent change of optical contrast and electrical conductivity. Despite the long-established technological applications of chalcogenide films in optical data storage devices and the high level reached in the development of PCRAM, the phase change process of such compounds is still the object of intense theoretical and experimental investigations.…”

Impact of Technology Scaling on Phase-Change Memory Performance

“…Due to fabrication process constraints, heater geometries with a high aspect ratio (i.e., geometries having a high ratio between the GST-heater contact diameter and the heater height), may not be easily manufacturable. Several fabrication solutions have been proposed to overcome lithographic limits and, thus, realize heater structures with minimized contact area (Lam, 2006;Pirovano et al, 2008). In the following, we will consider heater geometries with a high aspect ratio with the purpose of investigating the scaling perspective, even if they may require advanced fabrication techniques.…”