Phase Change Memory technology for embedded non volatile memory applications for 90nm and beyond

Annunziata, R.; Zuliani, P.; Borghi, Massimo; Sandre, G. De; Scotti, L.; Prelini, Carlo; Tosi, M.; Tortorelli, I.; Pellizzer, F.

doi:10.1109/iedm.2009.5424413

Cited by 40 publications

(18 citation statements)

References 3 publications

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“…The storage element is MOS-selected ( Fig. 1), being this architecture the most cost effective solution for embedded applications [3]. The resulting cell area is competitive for the multi-Mb array target of embedded products, and no additional masks are needed for the integration of the select transistor.…”

Section: Methodsmentioning

confidence: 99%

Engineering of chalcogenide materials for embedded applications of Phase Change Memory

Zuliani

Palumbo

Borghi

et al. 2015

Solid-State Electronics

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Section: Methodsmentioning

confidence: 99%

Engineering of chalcogenide materials for embedded applications of Phase Change Memory

Zuliani

Palumbo

Borghi

et al. 2015

Solid-State Electronics

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“…The ability for PCRAM to replace Nor flash at the 90 nm node has already been verified, [213] and an 8 Gb PCRAM at the 20 nm node has recently been released, [214] which is comparable to the state-of-the-art NOR flash technology (8 Gb at 45 nm). Moreover, the scalability of PCRAM device to <5 nm has recently been demonstrated using carbon nanotubes as electrodes, [215,216] and a cycling endurance of 10 11 was also reported.…”

Section: Other Miscellaneous Pcram Cellsmentioning

confidence: 99%

Physical principles and current status of emerging non-volatile solid state memories

Wang

Yang

Wen

2015

Electron. Mater. Lett.

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Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for the next generation of data-storage devices based on a comparison of their performance.

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“…All characterizations are performed using this test structure. A wall-type PCM structure [29] is connected in series with a MOSFET selector, where the gate is used to limit the current flowing through the cell. ua is the radius of the active volume, where phase transitions are located.…”

Section: Electrical Characterization Methodsmentioning

confidence: 99%

Comprehensive Phase-Change Memory Compact Model for Circuit Simulation

Pigot

Bocquet

Gilibert

et al. 2018

IEEE Trans. Electron Devices

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Abstract-In this paper, a new continuous multilevel compact model for phase-change memory (PCM) is proposed. It is based on modified rate equations with the introduction of a variable related to GST melting. The model is evaluated using a large set of dynamic measurements and shows a good accuracy with a single model card. All fitting parameters are discussed and their impacts are detailed. Full circuit simulation is performed. Good convergence and fast simulation time suggest that this new compact model can be exploited for PCM circuit design.

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Phase Change Memory technology for embedded non volatile memory applications for 90nm and beyond

Cited by 40 publications

References 3 publications

Engineering of chalcogenide materials for embedded applications of Phase Change Memory

Engineering of chalcogenide materials for embedded applications of Phase Change Memory

Physical principles and current status of emerging non-volatile solid state memories

Comprehensive Phase-Change Memory Compact Model for Circuit Simulation

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