We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.
INTRODUCTIONIncreasing demand for data storage and data-intensive computing has triggered a tremendous research effort searching for materials and devices that hold the promise for ultra-high density, low-cost efficient storage [1,2] and non-volatile memory applications [3][4][5]. Hard disk drive (HDD), which stores information as the magnetization of the individual domains on the magnetic thin film media, has switched from longitudinal media (with in-plane remanent magnetization) to high anisotropy perpendicular media (with remanent out-of-plane magnetization) to increase the bit storage density. The retention time of the stored information in such perpendicular thin film media depends on the ratio of the anisotropy energy to the thermal energy, KuV/kBT, where Ku is the perpendicular magnetic anisotropy (PMA) coefficient, V is the volume of the bit, kB is the Boltzmann constant, and T is the temperature [1]. Moreover, it has been shown that magnets possessing PMA can reduce the critical switching current in spin-transfer-torque random access memory (STT-RAM) to a lower value while meeting the long-term data retention time criterion over in-plane magnetic materials [6]. Materials with strong PMA are thus desired to increase the memory density in both cases. Recent studies of chromium telluride thin films have shown presence of high magnetic anisotropy in these materials [7,8]. In this paper, we study the magnetic anisotropy and magnetization reversal process in epitaxial chromium telluride thin films which possesses strong magneto-crystalline anisotropy.Chromium telluride (Cr1-δTe) material systems have been studied previously to investigate their suitability for different applications in spintronics [9,10] as well as for complex magnetic